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26 p, 1.0 MB Characterization of HfO2-based devices with indication of second order memristor effects / Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cagli, Carlo (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Perniola, Luca (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Resistive switching is investigated in TiN/Ti/HfO (10 nm)/TiN devices in series with a NMOS transistor as selector in a 1T1R configuration. A complete electrical characterization of the devices is carried out using DC voltage loops, constant-voltage stressed and pulses with varying voltage amplitude and time width. [...]
2018 - 10.1016/j.mee.2018.04.006
Microelectronic engineering, Vol. 195 (August 2018) , p. 101-106
2 documents
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