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Top-layer engineering reshapes charge transfer at polar oxide interfaces / De Luca, Gabriele (Institut Català de Nanociència i Nanotecnologia) ; Spring, Jonathan (University of Zurich. Department of Physics) ; Kaviani, Moloud (University of Bern. Department of Chemistry, Biochemistry and Pharmaceutical Sciences) ; Jöhr, Simon (University of Zurich. Department of Physics) ; Campanini, Marco (Swiss Federal Laboratories for Materials Science and Technology) ; Zakharova, Anna (Paul Scherrer Institut (Suïssa)) ; Guillemard, Charles (ALBA Laboratori de Llum de Sincrotró) ; Herrero-Martín, Javier (ALBA Laboratori de Llum de Sincrotró) ; Erni, Rolf (Swiss Federal Laboratories for Materials Science and Technology) ; Piamonteze, Cinthia (Paul Scherrer Institut (Suïssa)) ; Rossell, Marta D. (Swiss Federal Laboratories for Materials Science and Technology) ; Aschauer, Ulrich (University of Bern. Department of Chemistry, Biochemistry and Pharmaceutical Sciences) ; Gibert, Marta (TU Wien. Institute of Solid State Physics)
Charge-transfer phenomena at heterointerfaces are a promising pathway to engineer functionalities absent in bulk materials but can also lead to degraded properties in ultrathin films. Mitigating such undesired effects with an interlayer reshapes the interface architecture, restricting its operability. [...]
2022 - DOI (Digital Object Identifier)

10.1002/adma.202203071
Advanced materials, Vol. 34, issue 36 (Sep. 2022) , art. 2203071

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