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8 p, 3.6 MB Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides / Aguirre, Fernando Leonel (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pazos, Sebastián Matías (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Palumbo, Félix (Universidad Tecnológica Nacional (Buenos Aires, Argentina))
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0. [...]
2019 - 10.1109/TED.2019.2922555
IEEE transactions on electron devices, Vol. 66, Issue 8 (August 2019) , p. 3349-3355  
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