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Articles, 2 records found
Articles 2 records found  
1.
8 p, 9.3 MB Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy / Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ; Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ; Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ; Garrido, Jose (Technische Universität München. Walter Schottky Institute) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Magen Dominguez, Cesar (Universidad de Zaragoza. Instituto de Nanociencia y Materiales de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ; ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779  
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2.
6 p, 1.5 MB Resonant tunnelling features in a suspended silicon nanowire single-hole transistor / Llobet Sixto, Jordi (Institut de Microelectrònica de Barcelona) ; Krali, Emiljana (Imperial College London. Department of Electrical and Electronic Engineering) ; Wang, Chen (Imperial College London. Department of Electrical and Electronic Engineering) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Jones, Mervyn E. (Imperial College London. Department of Electrical and Electronic Engineering) ; Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona) ; Durrani, Zahid A. K. (Imperial College London. Department of Electrical and Electronic Engineering) ; ALBA Laboratori de Llum de Sincrotró
Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. [...]
2015 - 10.1063/1.4936757
Applied physics letters, Vol. 107, issue 22 (Nov. 2015) , art. 223501  
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