Alexe, Marin - Resultados de la búsqueda - Depósito Digital de Documentos de la UAB

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Artículos	Encontrados 2 registros

7 p, 853.2 KB

Four-state ferroelectric spin-valve / Quindeau, Andy (Max Planck Institute of Microstructure Physics) ; Fina, Ignasi (University of Warwick. Department of Physics) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Apachitei, Geanina (University of Warwick. Department of Physics) ; Ferrer, Pilar (Harwell Science and Innovation Campus. Diamond Light Source) ; Nicklin, Chris (Harwell Science and Innovation Campus. Diamond Light Source) ; Pippel, Eckhard (Max Planck Institute of Microstructure Physics) ; Hesse, Dietrich (Max Planck Institute of Microstructure Physics) ; Alexe, Marin (University of Warwick. Department of Physics)
Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. [...]
2015 - DOI (Digital Object Identifier)

10.1038/srep09749
Scientific reports, Vol. 5 (May 2015) , art. 9749

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7 p, 721.1 KB

In-plane tunnelling field-effect transistor integrated on Silicon / Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Apachitei, Geanina (University of Warwick. Department of Physics) ; Preziosi, Daniele (Max Planck Institute of Microstructure Physics) ; Deniz, Hakan (Max Planck Institute of Microstructure Physics) ; Kriegner, Dominik (Charles University. Department of Condensed Matter Physics) ; Martí Rovirosa, Xavier (Institute of Physics) ; Alexe, Marin (University of Warwick. Department of Physics)
Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. [...]
2015 - DOI (Digital Object Identifier)

10.1038/srep14367
Scientific reports, Vol. 5 (September 2015) , art. 14367

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