Resultats globals: 307 registres trobats en 0.03 segons.
Articles, 307 registres trobats
Articles 307 registres trobats  1 - 10següentfinal  anar al registre:
1.
4 p, 355.8 KB Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry / Forsen, E. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Ghatnekar-Nilsson, S. (University of Lund. Solid State Physics and The Nanometer Consortium) ; Teva Meroño, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Verd Martorell, Jaume (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sandberg, R. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Svendsen, W. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Esteve Tinto, Jaume (Institut de Microelectrònica de Barcelona (IMB-CNM)) ; Figueras Costa, Eduardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Campabadal Segura, Francesca (Institut de Microelectrònica de Barcelona (IMB-CNM)) ; Montelius, L. (University of Lund. Solid State Physics and The Nanometer Consortium) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Boisen, A. (Technical University of Denmark. Department of Micro and Nanotechnology) ; American Physical Society
Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor(CMOS) chips. Fabricatedresonatorsystems have been designed to have resonance frequencies up to 1. [...]
2005 - 10.1063/1.1999838
Applied Physics Letters, Vol. 87, Issue 4 (July 2005) , p. 043507/1- 043507/3  
2.
4 p, 238.9 KB Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The transition between well-defined soft and hard breakdown modes to progressive breakdown in ultrathin silicon dioxide based dielectrics is studied by means of the statistics of residual time (the time from first breakdown to device failure). [...]
2005 - 10.1063/1.1925316
Applied Physics Letters, Vol. 86, Issue 19 (May 2005) , p. 193502/1-193502/3  
3.
4 p, 503.7 KB Surface behavior of La2/3Ca1/3MnO3 epitaxial thin films / Abad Muñoz, Llibertat (Institut de Ciència de Materials de Barcelona) ; Martínez Perea, Benjamín (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; American Physical Society
The role of the surface layers in La2/3Ca1/3MnO3 magnetic oxide epitaxialthin films is analyzed. We show that the topmost layers do play a very relevant role on the transport properties acting as an insulating barrier. [...]
2005 - 10.1063/1.2133925
Applied Physics Letters, Vol. 87, Issue 21 (November 2005) , p. 212502  
4.
4 p, 752.7 KB Role of the microstructure on the magnetic properties of Co-doped ZnO nanoparticles / Martínez Perea, Benjamín (Institut de Ciència de Materials de Barcelona) ; Sandiumenge Ortiz, Felip (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; Arbiol i Cobos, Jordi (Universitat de Barcelona. Serveis Científics) ; Sibieude, F. (Institut de science et génie des Matériaux et Procédés (Font Romeu, França)) ; Monty, C. (Institut de science et génie des Matériaux et Procédés (Font Romeu, França)) ; American Physical Society
We report on the magnetic and structural properties of Co-doped ZnO nanoparticles prepared by the vaporization-condensation method in a solar reactor. X-ray diffraction data and high-resolution electron microscopy (HREM) confirm the total absence of metallic Co clusters or any other phase different from würtzite-type ZnO. [...]
2005 - 10.1063/1.1880433
Applied Physics Letters, Vol. 86, Issue 10 (March 2005) , p. 103113/1-103113/3  
5.
4 p, 246.1 KB Flux-flow critical-state susceptibility of superconductors / Chen, Du Xing (Universitat Autònoma de Barcelona. Departament de Física) ; Sánchez Moreno, Álvaro (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
The field-amplitude Hm and circular frequency ω dependent ac susceptibility, χ=χ′−jχ′′, of a hard superconducting cylinder with flux-flow type current-voltage characteristic is calculated. [...]
2005 - 10.1063/1.1947370
Applied Physics Letters, Vol. 86, Issue 24 (June 2005) , p. 242503/1-242503/3  
6.
4 p, 232.3 KB Effects of high-field electrical stress on the conduction properties of ultra-thin La2O3 films / Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Molina, J. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Kim, Y. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Iwai, H. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; American Physical Society
Electron transport in high-field stressed metal-insulator-silicon devices with ultrathin (<5nm) lanthanum oxide layers is investigated. We show that the leakage current flowing through the structure prior to degradation is direct and Fowler-Nordheimtunneling conduction, while that after stress exhibits diode-like behavior with series and parallel resistances. [...]
2005 - 10.1063/1.1944890
Applied Physics Letters, Vol. 86, Issue 23 (June 2005) , p. 232104/1-232104/3  
7.
4 p, 257.1 KB Alternating current loss in a cylinder with power-law current-voltage characteristic / Chen, D. -X. (Institució Catalana de Recerca i Estudis Avançats) ; Gu, C. (Tsinghua University. Applied Superconductivity Research Center) ; American Physical Society
The transportac loss Q in a superconducting cylinder of radius a with a power-law current-voltage characteristicE=Ec∣J/Jc∣n as a function of current amplitude Im is numerically calculated for a set of given values of a,Jc, and frequency f at n=5, 10, 20, and 30. [...]
2005 - 10.1063/1.1947912
Applied Physics Letters, Vol. 86, Issue 25 (Juny 2005) , p. 252504  
8.
4 p, 630.0 KB Modification of HF-treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions / Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
The modification of HF‐etched silicon (100) surface with a scanning tunneling microscope(STM) operated in air is studied for the first time in samples subjected to the standard HF etching without the follow‐up rinsing in H2O. [...]
1992 - 10.1063/1.107885
Applied Physics Letters, Vol. 61, Issue 4 (July 1992) , p. 462-464  
9.
4 p, 503.9 KB Nondestructive multlple breakdown events in very thin SI02 films / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Farrés i Berenguer, Esteve (Universitat Autònoma de Barcelona. Departament de Física) ; Placencia Millan, Iolanda (Universitat Autònoma de Barcelona. Departament de Física) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant‐voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. [...]
1989 - 10.1063/1.102396
Applied Physics Letters, Vol. 55, Issue 2 (July 1989) , p. 128-130  
10.
4 p, 652.0 KB Shockwave synthesis of a thallium-based superconductor with a novel defect microstructure / Iqbal, Z. (Allied‐Signal Inc. (Morristown, New Jersey)) ; Thadhani, N. N. (New Mexico Institute of Mining and Technology. Center for Explosives Technology Research) ; Chawla, N. (New Mexico Institute of Mining and Technology. Center for Explosives Technology Research) ; Ramakrishna, B. L. (Arizona State University. Department of Chemistry and Center for Solid State Science) ; Sharma, R. (Arizona State University. Department of Chemistry and Center for Solid State Science) ; Rao, K. V. (Kungl. Tekniska högskolan. Department of Condensed Matter Physics) ; Skumryev, Vassil (Kungl. Tekniska högskolan. Department of Condensed Matter Physics) ; Reidinger, F. (Allied‐Signal Inc. (Morristown, New Jersey)) ; Eckhardt, H. (Allied‐Signal Inc. (Morristown, New Jersey)) ; American Physical Society
We report the shock‐wave synthesis at a yield ≳80% by volume of the single copper layer thalliumsuperconductor of composition Tl2Ba2CuO6. The as‐synthesized material displays zero resistance near 55 K and a diamagnetic onset to bulk superconductivity at 70 K. [...]
1989 - 10.1063/1.102360
Applied Physics Letters, Vol. 55, Issue 22 (November 1989) , p. 2339-2341  

Articles : 307 registres trobats   1 - 10següentfinal  anar al registre:
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