Resultados globales: 3 registros encontrados en 0.01 segundos.
Artículos, Encontrados 3 registros
Artículos Encontrados 3 registros  
1.
34 p, 4.0 MB Gate electrostatics and quantum capacitance in ballistic graphene devices / Caridad, José M. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Shylau, Artsem A. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Gammelgaard, Lene (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Bøggild, Peter (Danmarks Tekniske Universitet. Center for Nanostructured Graphene)
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. [...]
2019 - 10.1103/PhysRevB.99.195408
Physical review B, Vol. 99, issue 19 (May 2019) , art. 195408  
2.
6 p, 1.3 MB Conductance quantization suppression in the quantum Hall regime / Caridad, José M. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Lotz, Mikkel R. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Shylau, Artsem A. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Thomsen, Joachim D. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Gammelgaard, Lene (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Booth, Timothy J. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Bøggild, Peter (Danmarks Tekniske Universitet. Center for Nanostructured Graphene)
Conductance quantization is the quintessential feature of electronic transport in non-interacting mesoscopic systems. This phenomenon is observed in quasi one-dimensional conductors at zero magnetic field B, and the formation of edge states at finite magnetic fields results in wider conductance plateaus within the quantum Hall regime. [...]
2018 - 10.1038/s41467-018-03064-8
Nature communications, Vol. 9 (February 2018) , art. 659  
3.
214 p, 55.9 MB Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems / Ferrari, Andrea C. (University of Cambridge) ; Bonaccorso, Francesco (Istituto Italiano di Tecnologia) ; Fal'ko, Vladimir (Lancaster University. Department of Physics) ; Novoselov, Konstantin S. (University of Manchester) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Bøggild, Peter (Technical University of Denmark) ; Borini, Stefano (Nokia Technologies) ; Koppens, Frank H.L. (Institut de Ciències Fotòniques) ; Palermo, Vincenzo (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ; Pugno, Nicola (Queen Mary University of London) ; Garrido Ariza, José A. (Technische Universität München) ; Sordan, Roman (Politecnico di Milano) ; Bianco, Alberto (Institut de Biologie Moleculaire et Cellulaire) ; Ballerini, Laura (Università di Trieste) ; Prato, Maurizio (Università di Trieste. Dipartimento di Scienze Farmaceutiche) ; Lidorikis, Elefterios (University of Ioannina. Department of Materials Science and Engineering) ; Kivioja, Jani (Nokia Technologies) ; Marinelli, Claudio (Wilton Centre) ; Ryhänen, Tapani (Nokia Technologies) ; Morpurgo, Alberto (Université de Genève. Département de Physique de la Matière Condensée) ; Coleman, Jonathan N. (Trinity College) ; Nicolosi, Valeria (Trinity College) ; Colombo, Luigi (Texas Instruments Incorporated) ; Fert, Albert (Université de Paris-Sud) ; García Hernández, Mar (Instituto de Ciencia de Materiales de Madrid) ; Bachtold, Adrian (Institut de Ciències Fotòniques) ; Schneider, Gregory F. (Leiden University) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Dekker, Cees (Delft University of Technology) ; Barbone, Matteo (University of Cambridge) ; Sun, Zhipei (University of Cambridge) ; Galiotis, Costas (University of Patras. Department of Chemical Engineering) ; Grigorenko, Alexander N. (University of Manchester) ; Konstantatos, Gerasimos (Institut de Ciències Fotòniques) ; Kis, Andras (Ecole Polytechique Fédérale de Lausanne) ; Katsnelson, Mikhail (Radboud University Nijmegen) ; Vandersypen, Lieven (Delft University of Technology) ; Loiseau, Annick (Laboratoire d'Etude des Microstructures) ; Morandi, Vittorio (CNR-Istituto per la Microelettronica e i Microsistemi) ; Neumaier, Daniel (Advanced Microelectronic Centre Aachen) ; Treossi, Emanuele (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ; Pellegrini, Vittorio (Scuola Normale Superiore) ; Polini, Marco (Scuola Normale Superiore) ; Tredicucci, Alessandro (Scuola Normale Superiore) ; Williams, Gareth M. (Airbus UK Ltd) ; Hee Hong, Byung (Seoul National University. Department of Chemistry) ; Ahn, Jong Hyun (Yonsei University) ; Kim, Jong Min (University of Oxford. Department of Engineering Science) ; Zirath, Herbert (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ; Van Wees, Bart J. (University of Groningen) ; Van Der Zant, Herre S.J. (Delft University of Technology) ; Occhipinti, Luigi (STMicroelectronics) ; Di Matteo, Andrea (STMicroelectronics) ; Kinloch, Ian A. (University of Manchester) ; Seyller, Thomas (Technische Universität Chemnitz) ; Quesnel, Etienne (Institut LITEN) ; Feng, Xinliang (Max-Planck-Institut für Polymerforschung) ; Teo, Ken (Aixtron Ltd.) ; Rupesinghe, Nalin (Aixtron Ltd.) ; Hakonen, Pertti (Aalto University) ; Neil, Simon R.T. (CambridgeIP) ; Tannock, Quentin (CambridgeIP) ; Löfwander, Tomas (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ; Kinaret, Jari (Chalmers University of Technology. Department of Applied Physics)
We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. [...]
2015 - 10.1039/c4nr01600a
Nanoscale, Vol. 7, Issue 11 (March 2015) , p. 4598-4810  

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