Resultados globales: 3 registros encontrados en 0.02 segundos.
Artículos, Encontrados 3 registros
Artículos Encontrados 3 registros  
1.
23 p, 2.2 MB Nanomechanics of flexoelectric switching / Očenášek, Jan (University of West Bohemia in Pilsen) ; Lu, Haidong (University of Nebraska-Lincoln. Department of Physics and Astronomy) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Eom, C.B. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Alcalá, Jorge (Universitat Politècnica de Catalunya. Departament de Ciència dels Materials i Enginyeria Metal·lúrgica) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Gruverman, A. (University of Nebraska-Lincoln. Department of Physics and Astronomy)
We examine the phenomenon of flexoelectric switching of polarization in ultrathin films of barium titanate induced by a tip of an atomic force microscope (AFM). The spatial distribution of the tip-induced flexoelectricity is computationally modeled both for perpendicular mechanical load (point measurements) and for sliding load (scanning measurements), and compared with experiments. [...]
2015 - 10.1103/PhysRevB.92.035417
Physical Review B, Vol. 92, Issue 3 (July 2015) , art. 035417  
2.
9 p, 1.8 MB On the persistence of polar domains in ultrathin ferroelectric capacitors / Zubko, Pavlo (University College London) ; Lu, Haidong (University of Nebraska-Lincoln) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Martí Rovirosa, Xavier (Academy of Sciences of the Czech Republic) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia) ; Eom, C.B. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Gruverman, A. (University of Nebraska-Lincoln. Department of Physics and Astronomy)
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. [...]
2017 - 10.1088/1361-648X/aa73c3
Journal of physics condensed matter, Vol. 29, Núm. 28 (July 2017) , art. 284001  
3.
18 p, 697.7 KB Mechanical tuning of LaAIO₃ SrTiO₃ interface conductivity / Sharma, P. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Ryu, S. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Burton, J.D. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Paudel, T.R. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Huang, Z. (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Ariando, None (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Tsymbal, E.Y. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Eom, C.B. (Department of Materials Science and Engineering, University of Wisconsin-Madison) ; Gruverman, A. (University of Nebraska–Lincoln. Department of Physics and Astronomy)
In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. [...]
2015 - 10.1021/acs.nanolett.5b01021
Nano letters, Vol. 15, issue 5 (May 2015) , p. 3547-3551  

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