Resultats globals: 8 registres trobats en 0.02 segons.
Articles, 8 registres trobats
Articles 8 registres trobats  
1.
6 p, 3.4 MB Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN / Kim, Gwangwoo (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Ma, Kyung Yeol (Ulsan National Institute of Science and Technology. Department of Energy Engineering) ; Park, Minsu (Korea Advanced Institute of Science and Technology. Department of Materials Science and Engineering) ; Kim, Minsu (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Jeon, Jonghyuk (Seoul National University. Department of Chemistry) ; Song, Jinouk (Korea Advanced Institute of Science and Technology. School of Electrical Engineering) ; Barrios Vargas, José Eduardo (Universidad Nacional Autónoma de México. Departamento de Física y Química Teórica) ; Sato, Yuta (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute) ; Lin, Yung-Chang (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute) ; Suenaga, Kazu (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Yoo, Seunghyup (Korea Advanced Institute of Science and Technology. School of Electrical Engineering) ; Sohn, Byeong-Hyeok (Seoul National University. Department of Chemistry) ; Jeon, Seokwoo (Korea Advanced Institute of Science and Technology. Department of Materials Science and Engineering) ; Shin, Hyeon Suk (Ulsan National Institute of Science and Technology. Low Dimensional Carbon Material Center)
Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. [...]
2020 - 10.1038/s41467-020-19181-2
Nature communications, Vol. 11 (2020) , art. 5359  
2.
47 p, 1.9 MB Charge transport in polycrystalline graphene : challenges and opportunities / Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Duong, Dinh Loc (Sungkyunkwan University. Institute for Basic Science) ; Nguyen, Van Luan (Sungkyunkwan University. Department of Energy Science) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (University of Helsinki. Department of Physics) ; Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Lee, Young Hee (Sungkyunkwan University. Institute for Basic Science) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. [...]
2014 - 10.1002/adma.201401389
Advanced materials, Vol. 26, issue 30 (August 2014) , p. 5079-5094  
3.
9 p, 1.1 MB Quantum transport in graphene in presence of strain-induced pseudo-Landau levels / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Wereport on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. [...]
2016 - 10.1088/2053-1583/3/3/034005
2D Materials, Vol. 3, issue 3 (Jan. 2016) , art. 34005  
4.
14 p, 1.6 MB Localized electronic states at grain boundaries on the surface of graphene and graphite / Luican-Mayer, Adina (University of Ottawa. Department of Physics) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Falkenberg, Jesper Toft (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Autès, Gabriel (Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL)) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Li, Guohong (Rutgers University. Department of Physics and Astronomy) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Yazyev, Oleg V. (Institute of Physics. Ecole Polytechnique Fédérale de Lausanne (EPFL)) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Yandrei, Eva Y. (Rutgers University. Department of Physics and Astronomy)
Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. [...]
2016 - 10.1088/2053-1583/3/3/031005
2D Materials, Vol. 3, Núm. 3 (September 2016) , art. 031005  
5.
17 p, 3.3 MB Grain boundary-induced variability of charge transport in hydrogenated polycrystalline graphene / Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Falkenberg, Jesper Toft (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Chemical functionalization has proven to be a promising means of tailoring the unique properties of graphene. For example, hydrogenation can yield a variety of interesting effects, including a metal-insulator transition or the formation of localized magnetic moments. [...]
2017 - 10.1088/2053-1583/aa59de
2D Materials, Vol. 4, Núm. 2 (June 2017) , article 25009  
6.
7 p, 1.1 MB Near-field photocurrent nanoscopy on bare and encapsulated graphene / Woessner, Achim (Institut de Ciències Fotòniques (Castelldefels)) ; Alonso González, Pablo (Chinese Academy of Science. Institute of Physics (Beijing)) ; Lundeberg, Mark B. (Institut de Ciències Fotòniques (Castelldefels)) ; Gao, Yuanda (Columbia University) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Navickaite, Gabriele (Institut de Ciències Fotòniques (Castelldefels)) ; Ma, Qiong (Massachusetts Institute of Technology. Department of Physics) ; Janner, Davide (Institut de Ciències Fotòniques (Castelldefels)) ; Watanabe, Kenji (National Institute for Materials Science (Tsukuba, Japó)) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Taniguchi, Takashi (National Institute for Materials Science (Tsukuba, Japó)) ; Pruneri, Valerio (Institut de Ciències Fotòniques (Castelldefels)) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Jarillo-Herrero, Pablo (Massachusetts Institute of Technology. Department of Physics) ; Hone, James (Columbia University. Department of Mechanical Engineering) ; Hillenbrand, Rainer (CIC nanoGUNE (Sant Sebastià, País Basc)) ; Koppens, Frank H.L. (Institut de Ciències Fotòniques (Castelldefels))
Optoelectronic devices utilizing graphene have demonstrated unique capabilities and performances beyond state-of-the-art technologies. However, requirements in terms of device quality and uniformity are demanding. [...]
2016 - 10.1038/ncomms10783
Nature communications, Vol. 7 (February 2016) , article 10783  
7.
25 p, 7.5 MB Electrical and Thermal Transport in Coplanar Polycrystalline Graphene-hBN Heterostructures / Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Mortazavi, Bohayra (Bauhaus-Universität Weimar (Alemanya)) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Martínez Gordillo, Rafael (Aix-Marseille Université (França)) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ; Rabczuk, Timon (Bauhaus-Universität Weimar (Alemanya)) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. [...]
2017 - 10.1021/acs.nanolett.6b04936
Nano letters, Vol. 17 Núm. 3 (March 2017) , p. 1660-1664  
8.
20 p, 943.8 KB Role of grain boundaries in tailoring electronic properties of polycrystalline graphene by chemical functionalization / Seifert, Max (Technische Universität München. Physik Department) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Bobinger, Marco (Technische Universität München. Physik Department) ; Sachsenhauser, Matthias (Technische Universität München. Physik Department) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Garrido, Jose (Technische Universität München. Physik Department)
Grain boundaries, inevitably present in chemical vapor deposited graphene, are expected to have considerable impact on the development of graphene-based hybrid materials with tailored material properties. [...]
2015 - 10.1088/2053-1583/2/2/024008
2D Materials, Vol. 2, Núm. 2 (May 2015) , article 024008  

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