Resultats globals: 5 registres trobats en 0.02 segons.
Articles, 5 registres trobats
Articles 5 registres trobats  
1.
21 p, 2.0 MB Field Effect in Graphene-Based van der Waals Heterostructures : Stacking Sequence Matters / Stradi, Daniele (QuantumWise A/S) ; Papior, Nick (Institut Català de Nanociència i Nanotecnologia) ; Hansen, O. (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology)
Stacked van der Waals (vdW) heterostructures where semiconducting two-dimensional (2D) materials are contacted by overlaid graphene electrodes enable atomically thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. [...]
2017 - 10.1021/acs.nanolett.7b00473
Nano letters, Vol. 17, Issue 4 (April 2017) , p. 2660-2666  
2.
49 p, 10.3 MB Green function, quasi-classical Langevin and Kubo-Greenwood methods in quantum thermal transport / Sevinçli, Hâldun (Izmir Institute of Technology) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Cuniberti, Gianaurelio (Dresden Center for Computational Materials Science) ; Brandbyge, Mads (Technical University of Denmark) ; Gutiérrez, Rafael (Institute for Materials Science and Max Bergmann Center of Biomaterials) ; Medrano Sandonas, Leonardo (Max Planck Institute for Physics of Complex Systems)
With the advances in fabrication of materials with feature sizes at the order of nanometers, it has been possible to alter their thermal transport properties dramatically. Miniaturization of device size increases the power density in general, hence faster electronics require better thermal transport, whereas better thermoelectric applications require the opposite. [...]
2019 - 10.1088/1361-648X/ab119a
Journal of Physics Condensed Matter, Vol. 31, Núm. 27 (July 2019) , art. 273003  
3.
14 p, 1.6 MB Localized electronic states at grain boundaries on the surface of graphene and graphite / Luican-Mayer, Adina (University of Ottawa. Department of Physics) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Falkenberg, Jesper Toft (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Autès, Gabriel (Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL)) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Li, Guohong (Rutgers University. Department of Physics and Astronomy) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Yazyev, Oleg V. (Institute of Physics. Ecole Polytechnique Fédérale de Lausanne (EPFL)) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Yandrei, Eva Y. (Rutgers University. Department of Physics and Astronomy)
Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. [...]
2016 - 10.1088/2053-1583/3/3/031005
2D Materials, Vol. 3, Núm. 3 (September 2016) , art. 031005  
4.
17 p, 3.3 MB Grain boundary-induced variability of charge transport in hydrogenated polycrystalline graphene / Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Falkenberg, Jesper Toft (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Chemical functionalization has proven to be a promising means of tailoring the unique properties of graphene. For example, hydrogenation can yield a variety of interesting effects, including a metal-insulator transition or the formation of localized magnetic moments. [...]
2017 - 10.1088/2053-1583/aa59de
2D Materials, Vol. 4, Núm. 2 (June 2017) , article 25009  
5.
4 p, 283.5 KB Scaling theory put into practice : first-principles modeling of transport in doped silicon nanowires / Markussen, Troels (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Rurali, Riccardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jauho, Antti-Pekka (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ; American Physical Society
We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the crossover from ballistic to diffusive transport in boron or phosphorus doped Si nanowires by computing the mean free path, sample-averaged conductance ⟨G⟩, and sample-to-sample variations std(G) as a function of energy, doping density, wire length, and the radial dopant profile. [...]
2007 - 10.1103/PhysRevLett.99.076803
Physical review letters, Vol. 99, Issue 7 (August 2007) , p. 76803  

Vegeu també: autors amb noms similars
1 Brandbyge, M.
Us interessa rebre alertes sobre nous resultats d'aquesta cerca?
Definiu una alerta personal via correu electrònic o subscribiu-vos al canal RSS.