Resultats globals: 8 registres trobats en 0.02 segons.
Articles, 8 registres trobats
Articles 8 registres trobats  
1.
26 p, 7.9 MB GaO and related ultra-wide bandgap power semiconductor oxides : new energy electronics solutions for CO emission mitigation / Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Asher, Jacob J. (Swansea University. College of Engineering) ; Jennings, Michael R. (Swansea University. College of Engineering) ; Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Currently, a significant portion (~50%) of global warming emissions, such as CO, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. [...]
2022 - 10.3390/ma15031164
Materials, Vol. 15, issue 3 (Feb. 2022) , art. 1164  
2.
13 p, 1.5 MB Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor / Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Sartel, Corinne (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Modreanu, Myrcea (University College Cork. Tyndall National Institute) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Rubio, Carles (Institut Català de Nanociència i Nanotecnologia) ; Arnold, Christophe (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Dumont, Yves. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
While there are several n-type transparent semiconductor oxides (TSO) for optoelectronic applications (e. g. LEDs, solar cells or display TFTs), their required p-type counterpart oxides are known to be more challenging. [...]
2019 - 10.1039/c9tc02910a
Journal of Materials Chemistry C, Vol. 7, issue 33 (Sep. 2019) , p. 10231-10239  
3.
43 p, 1.9 MB P-type ultrawide-band-gap spinel ZnGa2O4 : new perspectives for energy electronics / Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Sartel, Corinne. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Vilar, Christele (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Ballesteros, Belén (Institut Català de Nanociència i Nanotecnologia) ; Belarre, Francisco (Institut Català de Nanociència i Nanotecnologia) ; Del Corro, Elena (Institut Català de Nanociència i Nanotecnologia) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Li, Lijie (Swansea University. College of Engineering) ; Jennings, Mike (Swansea University. College of Engineering) ; Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Dumont, Yves (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
The family of spinel compounds is a large and important class of multifunctional materials of general formulation ABX with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. [...]
2020 - 10.1021/acs.cgd.9b01669
Crystal Growth and Design, Vol. 20 Núm. 4 (April 2020) , p. 2535-2546  
4.
19 p, 775.1 KB Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga₂O₃ / Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Sartel, Corinne (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Kabouche, R. (Centre national de la recherche scientifique (França). Institut d'Electronique, de Microélectronique et de Nanotechnologie) ; Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Rubio, Carles (Institut Català de Nanociència i Nanotecnologia) ; Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Medjdoub, Farid (Centre national de la recherche scientifique (França). Institut d'Electronique, de Microélectronique et de Nanotechnologie) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Dumont, Yves. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Which the actual critical electrical field of the ultra-wide bandgap semiconductor β-Ga₂O₃ is? Even that it is usual to find in the literature a given value for the critical field of wide and ultra-wide semiconductors such as SiC (3 MV/cm), GaN (3. [...]
2020 - 10.1016/j.mtphys.2020.100263
Materials today physics, Vol. 15 (Dec. 2020) , art. 100263  
5.
19 p, 1.0 MB P-type β-gallium oxide : a new perspective for power and optoelectronic devices / Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Ton-That, C. (University of Technology Sydney) ; Huynh, Tung Thanh (University of Technology Sydney) ; Phillips, Matthew (University of Technology Sydney) ; Russell, Stephen A. O. (University of Warwick) ; Jennings, M. R. (University of Warwick) ; Berini, Bruno (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jomard, François (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS)
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . [...]
2017 - 10.1016/j.mtphys.2017.10.002
Materials today physics, Vol. 3 (December 2017) , p. 118-126  
6.
15 p, 1.1 MB Wide and ultra-wide bandgap oxides : where paradigm-shift photovoltaics meets transparent power electronics / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M. R. (University of Warwick) ; Russell, Stephen A. O. (University of Warwick) ; Teherani, Féréchteh Hosseini (Nanovation) ; Bove, Philippe (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Rogers, David J. (Nanovation)
Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. [...]
2018 - 10.1117/12.2302576
Proceedings of SPIE, Vol. 10533 (February 2018) , art. 105331Q  
7.
36 p, 830.9 KB Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M. R. (Swansea University) ; Russell, Stephen A. O. (University of Warwick) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia) ; Ton-That, C. (University of Technology Sydney) ; Teherani, Féréchteh Hosseini (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Bove, Philippe (Nanovation) ; Rogers, David J. (Nanovation)
The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-GaO) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley-Queisser limit for open-circuit voltage (V) under typical indoor light. [...]
2019 - 10.1016/j.mtener.2019.100350
Materials today energy, Vol. 14 (December 2019) , art. 100350  
8.
22 p, 880.5 KB Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films / Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Rogers, David J. (Nanovation) ; Teherani, Féréchteh Hosseini (Nanovation) ; Rubio Lorente, Carles (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Von Bardeleben, Hans Jürgen (Institut des Nanosciences de Paris) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Ton-That, C. (University of Technology Sydney) ; Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Bove, Philippe (Nanovation) ; Sandana, Éric V. (Nanovation) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Here, we report the analogy of an extremely stable topological-like ultra-wide bandgap insulator, a solid that is a pure insulator in its bulk but has a metallic conductive surface, presenting a two-dimensional conductive channel at its surface that challenges our current thinking about semiconductor conductivity engineering. [...]
2019 - 10.1016/j.mtphys.2018.11.006
Materials today physics, Vol. 8 (March 2019) , p. 10-17  

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