Resultados globales: 7 registros encontrados en 0.02 segundos.
Artículos, Encontrados 7 registros
Artículos Encontrados 7 registros  
1.
11 p, 2.3 MB Optimizing magneto-ionic performance in structure/composition-engineered ternary nitrides / Ma, Zheng (Universitat Autònoma de Barcelona. Departament de Física) ; Monalisha, P. (Universitat Autònoma de Barcelona. Departament de Física) ; Tan, Zhengwei (Universitat Autònoma de Barcelona. Departament de Física) ; Pellicer Vilà, Eva Maria (Universitat Autònoma de Barcelona. Departament de Física) ; Liedke, Maciej Oskar (Helmholtz-Zentrum Dresden. Institute of Radiation Physics) ; Butterling, Maik (Helmholtz-Zentrum Dresden. Institute of Radiation Physics) ; Attallah, Ahmed (Helmholtz-Zentrum Dresden. Institute of Radiation Physics) ; Hirschmann, Eric (Helmholtz-Zentrum Dresden. Institute of Radiation Physics) ; Wagner, Andreas (Helmholtz-Zentrum Dresden. Institute of Radiation Physics) ; Ibrahim, Fatima (University of Grenoble Alpes) ; Chshiev, Mairbek (University of Grenoble Alpes) ; Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Magneto-ionics, an emerging approach to manipulate magnetism that relies on voltage-driven ion motion, holds the promise to boost energy efficiency in information technologies such as spintronic devices or future non-von Neumann computing architectures. [...]
2023 - 10.1016/j.jmat.2023.10.007
Journal of Materiomics, (November 2023)  
2.
8 p, 3.0 MB Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions / Zatko, Victor (Université Paris-Saclay) ; Galceran, Regina (Institut Català de Nanociència i Nanotecnologia) ; Galbiati, Marta (Université Paris-Saclay) ; Peiro, Julian (Université Paris-Saclay) ; Godel, Florian (Université Paris-Saclay) ; Kern, Lisa-Marie (Université Paris-Saclay) ; Perconte, David (Université Paris-Saclay) ; Ibrahim, Fatima (Université Grenoble Alpes) ; Hallal, Ali (Université Grenoble Alpes) ; Chshiev, Mairbek (Institut Universitaire de France) ; Martínez, Benjamín (Institut de Ciència de Materials de Barcelona) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; Kidambi, Piran R. (Vanderbilt University) ; Robertson, John (University of Cambridge) ; Hofmann, Stephan (University of Cambridge) ; Collin, Sophie (Université Paris-Saclay) ; Petroff, Frédéric (Université Paris-Saclay) ; Martin, Marie-Blandine (Université Paris-Saclay) ; Dlubak, Bruno (Université Paris-Saclay) ; Seneor, Pierre (Université Paris-Saclay)
2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. [...]
2023 - 10.1021/acs.nanolett.2c03113
Nano letters, Vol. 23, Issue 1 (January 2023) , p. 34-41  
3.
39 p, 1.5 MB Two-dimensional materials prospects for non-volatile spintronic memories / Yang, Hyunsoo (National University of Singapore. Department of Electrical and Computer Engineering) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Chshiev, Mairbek (SPINtronique et TEchnologie des Composants) ; Couet, Sébastien (Imec) ; Dieny, Bernard (SPINtronique et TEchnologie des Composants) ; Dlubak, Bruno (Unité Mixte de Physique. CNRS. Thales. Université Paris-Saclay) ; Fert, Albert (Université Paris-Saclay. Unité Mixte de Physique) ; Garello, Kevin (SPINtronique et TEchnologie des Composants) ; Jamet, Matthieu (SPINtronique et TEchnologie des Composants) ; Jeong, Dae-Eun (Samsung Electronics Co.) ; Lee, Kangho (Samsung Electronics Co.) ; Lee, Taeyoung (GLOBALFOUNDRIES Singapore Pte. Ltd.) ; Martin, Marie-Blandine (Université Paris-Saclay. Unité Mixte de Physique) ; Kar, Gouri Sankar (Imec) ; Sénéor, Pierre (Université Paris-Saclay. Unité Mixte de Physique) ; Shin, Hyeon-Jin (Samsung Advanced Institute of Technology) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. [...]
2022 - 10.1038/s41586-022-04768-0
Nature, Vol. 606, issue 7915 (June 2022) , p. 663-673  
4.
10 p, 4.9 MB From Binary to Ternary Transition-Metal Nitrides : A Boost toward Nitrogen Magneto-Ionics / Tan, Zhengwei (Universitat Autònoma de Barcelona. Departament de Física) ; Martins, Sofia (Universitat Autònoma de Barcelona. Departament de Física) ; Escobar, Michael (Universitat Autònoma de Barcelona. Departament de Física) ; de Rojas, Julius (Universitat Autònoma de Barcelona. Departament de Física) ; Ibrahim, Fatima (University of Grenoble Alpes) ; Chshiev, Mairbek (Institut Universitaire de France) ; Quintana Puebla, Alberto (Institut de Ciència de Materials de Barcelona) ; Lopeandía Fernández, Aitor (Institut Català de Nanociència i Nanotecnologia) ; Costa-Krämer, José L. (Instituto de Micro y Nanotecnología) ; Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Magneto-ionics is an emerging actuation mechanism to control the magnetic properties of materials via voltage-driven ion motion. This effect largely relies on the strength and penetration of the induced electric field into the target material, the amount of generated ion transport pathways, and the ionic mobility inside the magnetic media. [...]
2022 - 10.1021/acsami.2c12847
ACS applied materials & interfaces, Vol. 14, Issue 39 (May 2022) , p. 44581-44590  
5.
9 p, 2.6 MB Magneto-ionics in single-layer transition metal nitrides / de Rojas, Julius (Universitat Autònoma de Barcelona. Departament de Física) ; Salguero, Joaquín (Consejo Superior de Investigaciones Científicas (Espanya).Instituto de Micro y Nanotecnología) ; Ibrahim, Fatima (Université de Grenoble Alpes) ; Chshiev, Mairbek (Université de Grenoble Alpes) ; Quintana Puebla, Alberto (Georgetown University. Department of Physics) ; Lopeandía Fernández, Aitor (Institut Català de Nanociència i Nanotecnologia) ; Liedke, Maciej O. (Helmholtz-Zentrum Dresden−Rossendorf. Institute of Radiation Physics) ; Butterling, Maik (Helmholtz-Zentrum Dresden−Rossendorf. Institute of Radiation Physics) ; Hirschmann, Eric (Helmholtz-Zentrum Dresden−Rossendorf. Institute of Radiation Physics) ; Wagner, Andreas (Helmholtz-Zentrum Dresden−Rossendorf. Institute of Radiation Physics) ; Abad, Llibertat (Institut de Microelectrònica de Barcelona) ; Costa-Krämer, José L. (Consejo Superior de Investigaciones Científicas (Espanya).Instituto de Micro y Nanotecnología) ; Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Magneto-ionics allows for tunable control of magnetism by voltage-driven transport of ions, traditionally oxygen or lithium and, more recently, hydrogen, fluorine, or nitrogen. Here, magneto-ionic effects in single-layer iron nitride films are demonstrated, and their performance is evaluated at room temperature and compared with previously studied cobalt nitrides. [...]
2021 - 10.1021/acsami.1c06138
ACS applied materials & interfaces, Vol. 13, issue 26 (July 2021) , p. 30826-30834  
6.
8 p, 1.7 MB Voltage-driven motion of nitrogen ions : a new paradigm for magneto-ionics / de Rojas, Julius (Universitat Autònoma de Barcelona. Departament de Física) ; Quintana Puebla, Alberto (Georgetown University. Department of Physics (USA)) ; Lopeandía Fernández, Aitor (Universitat Autònoma de Barcelona. Departament de Física) ; Salguero, Joaquín (Instituto de Micro y Nanotecnología) ; Muñiz, Beatriz (Instituto de Micro y Nanotecnología) ; Ibrahim, Fatima (Centre National de la Recherche Scientifique (França)) ; Chshiev, Mairbek (Centre National de la Recherche Scientifique (França)) ; Nicolenco, Aliona (Universitat Autònoma de Barcelona. Departament de Física) ; Liedke, Maciej O. (Helmholtz-Zentrum Dresden-Rossendorf. Institute of Radiation Physics (Germany)) ; Butterling, Maik (Helmholtz-Zentrum Dresden-Rossendorf. Institute of Radiation Physics (Germany)) ; Wagner, Andreas (Helmholtz-Zentrum Dresden-Rossendorf. Institute of Radiation Physics (Germany)) ; Sireus, Veronica (Universitat Autònoma de Barcelona. Departament de Física) ; Abad, Llibertat (Institut de Microelectrònica de Barcelona) ; Jensen, Christopher J. (Georgetown University. Department of Physics (USA)) ; Liu, Kai (Georgetown University. Department of Physics (USA)) ; Nogués, Josep (Institut Català de Nanociència i Nanotecnologia) ; Costa-Krämer, José L. (Instituto de Micro y Nanotecnología) ; Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ions. Here, we demonstrate room-temperature voltage-driven nitrogen transport (i. [...]
2020 - 10.1038/s41467-020-19758-x
Nature communications, Vol. 11 (November 2020) , art. 5871  
7.
8 p, 1.4 MB Tailoring magnetic insulator proximity effects in graphene : First-principles calculations / Hallal, Ali (Université Grenoble Alpes) ; Ibrahim, Fatima (Université Grenoble Alpes) ; Yang, Hongxin (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Chshiev, Mairbek (Université Grenoble Alpes)
We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). [...]
2017 - 10.1088/2053-1583/aa6663
2D Materials, Vol. 4, Núm. 2 (June 2017) , article 025074  

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