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6 p, 979.5 KB |
Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
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Lafont, F. (Laboratoire National de Métrologie et d'Essais) ;
Ribeiro-Palau, Rebeca (Laboratoire National de Métrologie et d'Essais) ;
Han, Z. (Institut polytechnique de Grenoble. Institut Néel) ;
Cresti, Alessandro (Institut polytechnique de Grenoble. Institute of Microelectronics, Electromagnetism and Photonics) ;
Delvallée, Alexandra (Laboratoire National de Métrologie et d'Essais) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Bouchiat, Vincent (Institut polytechnique de Grenoble. Institut Néel) ;
Ducourtieux, Sebastien (Laboratoire National de Métrologie et d'Essais) ;
Schopfer, F. (Laboratoire National de Métrologie et d'Essais) ;
Poirier, W. (Laboratoire National de Métrologie et d'Essais)
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene, grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. [...]
2014 -  10.1103/PhysRevB.90.115422
Physical review B : Condensed matter and materials physics, Vol. 90, issue 11 (Sep. 2014) , art. 115422
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15 p, 1.7 MB |
Deciphering the origin of nonlocal resistance in multiterminal graphene on hexagonal-boron-nitride with ab initio quantum transport : fermi surface edge currents rather than Fermi sea topological valley currents
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Marmolejo Tejada, J. M. (University of Delaware. Department of Physics and Astronomy) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
Petrović, M. D. (University of Delaware. Department of Mathematical Sciences) ;
Chang, P-H (University of Nebraska Lincoln. Department of Physics and Astronomy) ;
Sheng, X-L (University of Delaware. Department of Mathematical Sciences) ;
Cresti, Alessandro (Université Grenoble Alpes) ;
Plecháč, P. (University of Delaware. Department of Mathematical Sciences) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Nikolić, B. K. (University of Delaware. Department of Physics and Astronomy)
2018 - 10.1088/2515-7639/aad585
JPhys materials, Vol. 1, Núm. 1 (September 2018) , art. 015006
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43 p, 3.3 MB |
Sensing ion channel in neuron networks with graphene field effect transistors
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Veliev, Farida (Université Grenoble Alpes) ;
Cresti, Alessandro (Université Grenoble Alpes) ;
Kalita, Dipankar (Université Grenoble Alpes) ;
Bourrier, Antoine (Université Grenoble Alpes) ;
Belloir, Tiphaine (Université Grenoble Alpes) ;
Briançon-Marjollet, Anne (Université Grenoble Alpes) ;
Albrieux, Mireille (Université Grenoble Alpes) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Bouchiat, Vincent (Université Grenoble Alpes) ;
Delacour, Cécile (Université Grenoble Alpes)
Graphene, the atomically-thin honeycomb carbon lattice, is a highly conducting 2D material whose exposed electronic structure offers an ideal platform for chemical and biological sensing. Its biocompatible, flexible and chemically inert nature associated with the lack of dangling bonds, offers novel perspectives for direct interfacing with biological molecules. [...]
2018 - 10.1088/2053-1583/aad78f
2D Materials, Vol. 5, Núm. 4 (October 2018) , art. 45020
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17 p, 868.1 KB |
Impact of vacancies on diffusive and pseudodiffusive electronic transport in graphene
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Cresti, Alessandro (Université Grenoble Alpes) ;
Louvet, Thibaud (Institut Català de Nanociència i Nanotecnologia) ;
Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ;
Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ;
Lenarczyk, Pawel (Institut Català de Nanociència i Nanotecnologia) ;
Huhs, Georg (Barcelona Supercomputing Center) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. [...]
2013 - 10.3390/cryst3020289
Crystals, Vol. 3, Issue 2 (June 2013) , p. 289-305
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81 p, 4.0 MB |
Charge, spin and valley Hall effects in disordered grapheme
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Cresti, Alessandro (Université Grenoble Alpes) ;
Nikolíc, B. K. (University of Delaware. Department of Physics and Astronomy) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of e2/h, has been the first fascinating manifestation of the topological state of matter driven by magnetic field and disorder, and related to the formation of non-dissipative current flow. [...]
2016 - 10.1393/ncr/i2016-10130-6
Rivista del nuovo cimento, Vol. 39, issue 12 (December 2016) , p. 587-667
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6 p, 1.1 MB |
Unconventional features in the quantum Hall regime of disordered graphene : Percolating impurity states and Hall conductance quantization
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Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ;
Ortmann, Frank (Technische Universität Dresden) ;
Cresti, Alessandro (Université Grenoble Alpes) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the formation of critical states in disordered graphene, at the origin of variable and unconventional transport properties in the quantum Hall regime, such as a zero-energy Hall conductance plateau in the absence of an energy band gap and Landau-level degeneracy breaking. [...]
2016 - 10.1103/PhysRevB.93.115404
Physical review B, Vol. 93, Núm. 11 (March 2016) , p. 115404
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