Home > Search Results: Cresti, Alessandro
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Articles, 3 records found
Articles 3 records found  
1.
12 p, 435.8 KB Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons / Marconcini, Paolo (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Cresti, Alessandro (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. [...]
2018 - 10.3390/ma11050667
Materials, Vol. 11, issue. 5 (April 2018) , art. 667  
Detailed record - Creative Commons
2.
81 p, 4.0 MB Charge, spin and valley Hall effects in disordered grapheme / Cresti, Alessandro (Université Grenoble Alpes) ; Nikolíc, B.K. (University of Delaware. Department of Physics and Astronomy) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of e2/h, has been the first fascinating manifestation of the topological state of matter driven by magnetic field and disorder, and related to the formation of non-dissipative current flow. [...]
2016 - 10.1393/ncr/i2016-10130-6
Rivista del nuovo cimento, Vol. 39, issue 12 (December 2016) , p. 587-667  
Detailed record - Creative Commons
3.
6 p, 1.1 MB Unconventional features in the quantum Hall regime of disordered graphene : Percolating impurity states and Hall conductance quantization / Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Technische Universität Dresden) ; Cresti, Alessandro (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the formation of critical states in disordered graphene, at the origin of variable and unconventional transport properties in the quantum Hall regime, such as a zero-energy Hall conductance plateau in the absence of an energy band gap and Landau-level degeneracy breaking. [...]
2016 - 10.1103/PhysRevB.93.115404
Physical Review B, Vol. 93, Núm. 11 (March 2016) , p. 115404  
Detailed record -

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1 Cresti, A.
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