Resultats globals: 31 registres trobats en 0.02 segons.
Articles, 30 registres trobats
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Articles 30 registres trobats  1 - 10següentfinal  anar al registre:
1.
13 p, 3.8 MB Observation of giant and tunable thermal diffusivity of a Dirac fluid at room temperature / Block, Alexander (Institut Català de Nanociència i Nanotecnologia) ; Principi, Alessandro (University of Manchester. School of Physics and Astronomy) ; Hesp, Niels C. H. (Institut de Ciències Fotòniques) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Liebel, Matz (Institut de Ciències Fotòniques) ; Watanabe, Kenji (National Institute for Materials Science. Research Center for Functional Materials (Tsukuba, Japó)) ; Taniguchi, Takashi (National Institute for Materials Science. International Center for Materials Nanoarchitectonics (Tsukuba, Japó)) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Koppens, Frank (Institució Catalana de Recerca i Estudis Avançats) ; van Hulst, Niek F. (Institut de Ciències Fotòniques) ; Tielrooij, Klaas-Jan (Institut Català de Nanociència i Nanotecnologia)
Conducting materials typically exhibit either diffusive or ballistic charge transport. When electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges -. More stringent conditions eventually yield a quantum-critical Dirac-fluid regime, where electronic heat can flow more efficiently than charge -. [...]
2021 - 10.1038/s41565-021-00957-6
Nature Nanotechnology, Vol. 16 (Nov. 2021) , p. 1195-1200  
2.
69 p, 4.2 MB Linear scaling quantum transport methodologies / Fan, Zheyong (Bohai University. School of Mathematics and Physics) ; Garcia, José H (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Barrios Vargas, José Eduardo (Universidad Nacional Autónoma de México. Departamento de Física y Química Teórica) ; Panhans, Michel (Technische Universität Dresden. Center for Advancing Electronics) ; Harju, Ari (Varian Medical Systems Finland) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. [...]
2021 - 10.1016/j.physrep.2020.12.001
Physics Reports, Vol. 903 (April 2021) , p. 1-69  
3.
12 p, 2.3 MB Multiple quantum phases in graphene with enhanced spin-orbit coupling : from the quantum spin hall regime to the spin hall effect and a robust metallic state / Cresti, Alessandro (IMEP-LAHC) ; Dinh, Van Tuan (Universitat Autònoma de Barcelona. Departament de Física) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. [...]
2014 - 10.1103/PhysRevLett.113.246603
Physical review letters, Vol. 113, issue 24 (Dec. 2014) , art. 246603  
4.
7 p, 981.7 KB Anisotropic behavior of quantum transport in graphene superlattices : coexistence of ballistic conduction with Anderson insulating regime / Pedersen, Jesper Goor (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength of multiple scattering phenomena can strongly depend on the transport measurement geometry. [...]
2014 - 10.1103/PhysRevB.89.165401
Physical review B : Condensed matter and materials physics, Vol. 89, issue 16 (April 2014) , art. 165401  
5.
6 p, 979.5 KB Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition / Lafont, F. (Laboratoire National de Métrologie et d'Essais) ; Ribeiro-Palau, Rebeca (Laboratoire National de Métrologie et d'Essais) ; Han, Z. (Institut polytechnique de Grenoble. Institut Néel) ; Cresti, Alessandro (Institut polytechnique de Grenoble. Institute of Microelectronics, Electromagnetism and Photonics) ; Delvallée, Alexandra (Laboratoire National de Métrologie et d'Essais) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Bouchiat, Vincent (Institut polytechnique de Grenoble. Institut Néel) ; Ducourtieux, Sebastien (Laboratoire National de Métrologie et d'Essais) ; Schopfer, F. (Laboratoire National de Métrologie et d'Essais) ; Poirier, W. (Laboratoire National de Métrologie et d'Essais)
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene, grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. [...]
2014 - 10.1103/PhysRevB.90.115422
Physical review B : Condensed matter and materials physics, Vol. 90, issue 11 (Sep. 2014) , art. 115422  
6.
11 p, 213.0 KB Physical model of the contact resistivity of metal-graphene junctions / Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. [...]
2014 - 10.1063/1.4874181
Journal of applied physics, Vol. 115, issue 16 (April 2014) , art. 164513  
7.
47 p, 1.9 MB Charge transport in polycrystalline graphene : challenges and opportunities / Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Duong, Dinh Loc (Sungkyunkwan University. Institute for Basic Science) ; Nguyen, Van Luan (Sungkyunkwan University. Department of Energy Science) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (University of Helsinki. Department of Physics) ; Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Lee, Young Hee (Sungkyunkwan University. Institute for Basic Science) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. [...]
2014 - 10.1002/adma.201401389
Advanced materials, Vol. 26, issue 30 (August 2014) , p. 5079-5094  
8.
10 p, 3.9 MB Universal Spin Diffusion Length in Polycrystalline Graphene / Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Dubois, Simon M.M. (Université Catholique de Louvain) ; Charlier, Jean Christophe (Université Catholique de Louvain) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 μm, which is on par with the best measurements made in single-crystal graphene. [...]
2019 - 10.1021/acs.nanolett.9b03112
Nano letters, Vol. 19, Issue 10 (October 2019) , p. 7418-7426  
9.
9 p, 1.8 MB Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene / Karpiak, Bogdan (Chalmers University of Technology) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Zollner, Klaus (University of Regensburg) ; Vila Tusell, Marc (Universitat Autònoma de Barcelona. Departament de Física) ; Khokhriakov, Dmitrii (Chalmers University of Technology) ; Hoque, Anamul Md (Chalmers University of Technology) ; Dankert, André (Chalmers University of Technology) ; Svedlindh, Peter (Uppsala University) ; Fabian, Jaroslav (University of Regensburg) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Dash, Saroj P. (Chalmers University of Technology)
Engineering 2D material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator CrGeTe and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. [...]
2019 - 10.1088/2053-1583/ab5915
2D Materials, Vol. 7, Núm. 1 (December 2019) , art. 15026  
10.
7 p, 2.2 MB Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport / Vila Tusell, Marc (Institut Català de Nanociència i Nanotecnologia) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Groth, Christoph W. (Université Grenoble Alpes) ; Waintal, Xavier (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. [...]
2020 - 10.1103/PhysRevLett.124.196602
Physical review letters, Vol. 124, Issue 19 (May 2020) , art. 196602  

Articles : 30 registres trobats   1 - 10següentfinal  anar al registre:
Documents de recerca 1 registres trobats  
1.
201 p, 31.4 MB Theoretical Study of Spin Dynamics in Two-Dimensional Quantum Materials / Vila Tusell, Marc ; Roche, Stephan Jean Louis, dir. ; Cummings, Aron, dir. ; Valenzuela, Sergio Osvaldo, dir. ; Navau Ros, Carles, dir.
El camp de l'espintrònica té l'objectiu d'utilitzar el grau de llibertat d'espín de l'electró per emmagatzemar, transportar i manipular informació en dispositius electrònics de nova generació. [...]
El campo de la espintrónica tiene como objetivo utilizar el grado de libertad de espín para almacenar, transportar y manipular información en dispositivos electrónicos de próxima generación. En esta tesis, utilizo metodologías de transporte cuántico para simular la dinámica de espín en dispositivos hechos de materiales bidimensionales. [...]
The field of spintronics aims at using the spin degree of freedom to store, transport and manipulate information in next-generation electronic devices. In this thesis, I use quantum transport methodologies to simulate spin dynamics in devices made of two-dimensional materials. [...]

2020  

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