Curto, Vicenzo Fabio - Search Results - UAB Digital Repository of Documents

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6 p, 1.6 MB

Effect of channel thickness on noise in organic electrochemical transistors / Polyravas, Anastasios G. (University of Cambridge. Department of Engineering) ; Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia) ; Curto, Vicenzo Fabio (University of Cambridge. Department of Engineering) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ; Malliaras, George (University of Cambridge. Department of Engineering)
Organic electrochemical transistors (OECTs) have been widely used as transducers in electrophysiology and other biosensing applications. Their identifying characteristic is a transconductance that increases with channel thickness, and this provides a facile mechanism to achieve high signal amplification. [...]
2020 - DOI (Digital Object Identifier)

10.1063/5.0019693
Applied physics letters, Vol. 117, issue 7 (August 2020) , art. 73302

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7 p, 1.0 MB

Impact of contact overlap on transconductance and noise in organic electrochemical transistors / Polyravas, Anastasios G. (University of Cambridge. Department of Engineering) ; Curto, Vicenzo Fabio (University of Cambridge. Department of Engineering) ; Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ; Malliaras, George (University of Cambridge. Department of Engineering)
Organic electrochemical transistors (OECTs) from poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) are used as amplifying transducers for bioelectronics. Although the impact on performance of device geometry parameters such as channel area and thickness has been widely explored, the overlap between the semiconductor film and the source and drain contacts has not been considered. [...]
2019 - DOI (Digital Object Identifier)

10.1088/2058-8585/ab4dc4
Flexible and printed electronics, Vol. 4, Núm. 4 (December 2019) , art. 44003

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