Resultats globals: 11 registres trobats en 0.02 segons.
Articles, 10 registres trobats
Documents de recerca, 1 registres trobats
Articles 10 registres trobats  
1.
11 p, 562.6 KB Spin transport in hydrogenated graphene / Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Dubois, Simon M.M. (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Gmitra, Martin (University of Regensburg) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Kochan, Denis (University of Regensburg) ; Ortmann, Frank (Technische Universität Dresden) ; Charlier, Jean Christophe (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Fabian, Jaroslav (Universität Regensburg) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. [...]
2015 - 10.1088/2053-1583/2/2/022002
2D Materials, Vol. 2, Núm. 2 (June 2015) , art. 22002  
2.
17 p, 868.1 KB Impact of vacancies on diffusive and pseudodiffusive electronic transport in graphene / Cresti, Alessandro (Université Grenoble Alpes) ; Louvet, Thibaud (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Lenarczyk, Pawel (Institut Català de Nanociència i Nanotecnologia) ; Huhs, Georg (Centre Nacional de Supercomputació) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. [...]
2013 - 10.3390/cryst3020289
Crystals, Vol. 3, Issue 2 (June 2013) , p. 289-305  
3.
7 p, 2.3 MB Spin hall effect and origins of nonlocal Resistance in adatom-decorated graphene / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Marmolejo Tejada, J.M. (University of Delaware. Department of Physics and Astronomy) ; Waintal, X. (Université Grenoble Alpes) ; Nikolić, B.K. (University of Delaware. Department of Physics and Astronomy) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Recent experiments reporting an unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer-Büttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity accessible to experiments. [...]
2016 - 10.1103/PhysRevLett.117.176602
Physical review letters, Vol. 117, issue 17 (Oct. 2016) , p. 176602  
4.
12 p, 491.8 KB Anomalous ballistic transport in disordered bilayer graphene : A Dirac semimetal induced by dimer vacancies / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report anomalous quantum transport features in bilayer graphene in the presence of a random distribution of structural vacancies. By using an efficient real-space Kubo-Greenwood transport methodology, the impact of a varying density of dimer versus nondimer vacancies is investigated in very large scale disordered models. [...]
2016 - 10.1103/PhysRevB.93.041403
Physical review B, Vol. 93, Isuue 4 (January 2016) , p. 041403(R)  
5.
8 p, 774.9 KB Spin dynamics and relaxation in graphene dictated by electron-hole puddles / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Technische Universität Dresden) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The understanding of spin dynamics and relaxation mechanisms in clean graphene, and the upper time and length scales on which spin devices can operate, are prerequisites to realizing graphene-based spintronic technologies. [...]
2016 - 10.1038/srep21046
Scientific reports, Vol. 6 (2016) , art. 21046  
6.
12 p, 309.1 KB Spin dynamics in bilayer graphene : Role of electron-hole puddles and Dyakonov-Perel mechanism / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Adam, Shaffique (National University of Singapore. Centre for Advanced 2D Materials) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on spin transport features which are unique to high quality bilayer graphene, in the absence of magnetic contaminants and strong intervalley mixing. The time-dependent spin polarization of a propagating wave packet is computed using an efficient quantum transport method. [...]
2016 - 10.1103/PhysRevB.94.041405
Physical review B, Vol. 94, Issue 4 (July 2016) , p. 41405  
7.
7 p, 917.0 KB Spin manipulation in graphene by chemically induced pseudospin polarization / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Spin manipulation is one of the most critical challenges to realize spin-based logic devices and spintronic circuits. Graphene has been heralded as an ideal material to achieve spin manipulation, but so far new paradigms and demonstrators are limited. [...]
2016 - 10.1103/PhysRevLett.116.106601
Physical review letters, Vol. 116, Issue 10 (March 2016) , art. 106601  
8.
15 p, 378.5 KB Pseudospin-driven spin relaxation mechanism in graphene / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Universitat Autònoma de Barcelona. Departament de Física.
The prospect of transporting spin information over long distances in graphene, possible because of its small intrinsic spin-orbit coupling (SOC) and vanishing hyperfine interaction, has stimulated intense research exploring spintronics applications. [...]
2014 - 10.1038/nphys3083
Nature Physics, Vol. 10, Núm. 11 (September 2014) , p. 857-863  
9.
6 p, 3.1 MB Scaling properties of charge transport in polycrystalline graphene / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (Universität Wien. Faculty of Physics) ; Louvet, Thibaud (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Meyer, Jannik C. (Universität Wien. Faculty of Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Polycrystalline graphene is a patchwork of coalescing graphene grains of varying lattice orientations and size, resulting from the chemical vapor deposition (CVD) growth at random nucleation sites on metallic substrates. [...]
2013 - 10.1021/nl400321r
Nano letters, Vol. 13, issue 4 (April 2013) , p. 1730-1735  
10.
5 p, 1.7 MB Impact of graphene polycrystallinity on the performance of graphene field-effect transistors / Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cummings, Aron W. (Institut Català de Nanociencia i Nanotecnologia) ; Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (University of Vienna. Faculty of Physics) ; Roche, Stephan (Institució Catalana de Recerca i Estudis Avançats) ; American Institute of Physics
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. [...]
2014 - 10.1063/1.4863842
Applied physics letters, Vol. 104, Issue 4 (January 2014) , p. 043509/1-043509/4  

Documents de recerca 1 registres trobats  
1.
228 p, 4.6 MB Charge and Spin Transport in Disordered Graphene-Based Materials / Dinh, Van Tuan ; Roche, Stephan, dir. ; Pascual, Jordi ; Universitat Autònoma de Barcelona. Departament de Física
Esta tesis está enfocada en la modelización y simulación del transporte de carga y spin en materiales bidimensionales basados en Grafeno, así como en el impacto de la policristalinidad en el rendimiento de transistores de efecto campo diseñados con este tipo de materiales. [...]
This thesis is focused on modeling and simulation of charge and spin transport in two dimensional graphene-based materials as well as the impact of graphene polycrystallinity on the performance of graphene field-effect transistors. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2014  

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