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4 p, 503.9 KB Nondestructive multlple breakdown events in very thin SI02 films / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Farrés i Berenguer, Esteve (Universitat Autònoma de Barcelona. Departament de Física) ; Placencia Millan, Iolanda (Universitat Autònoma de Barcelona. Departament de Física) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant‐voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. [...]
1989 - 10.1063/1.102396
Applied Physics Letters, Vol. 55, Issue 2 (July 1989) , p. 128-130  

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