Resultados globales: 2 registros encontrados en 0.02 segundos.
Artículos, Encontrados 2 registros
Artículos Encontrados 2 registros  
1.
19 p, 1.0 MB P-type β-gallium oxide : a new perspective for power and optoelectronic devices / Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Ton-That, C. (University of Technology Sydney) ; Huynh, Tung Thanh (University of Technology Sydney) ; Phillips, Matthew (University of Technology Sydney) ; Russell, Stephen A. O. (University of Warwick) ; Jennings, M. R. (University of Warwick) ; Berini, Bruno (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jomard, François (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS)
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . [...]
2017 - 10.1016/j.mtphys.2017.10.002
Materials today physics, Vol. 3 (December 2017) , p. 118-126  
2.
22 p, 880.5 KB Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films / Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Rogers, David J. (Nanovation) ; Teherani, Féréchteh Hosseini (Nanovation) ; Rubio Lorente, Carles (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Von Bardeleben, Hans Jürgen (Institut des Nanosciences de Paris) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Ton-That, C. (University of Technology Sydney) ; Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Bove, Philippe (Nanovation) ; Sandana, Éric V. (Nanovation) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Here, we report the analogy of an extremely stable topological-like ultra-wide bandgap insulator, a solid that is a pure insulator in its bulk but has a metallic conductive surface, presenting a two-dimensional conductive channel at its surface that challenges our current thinking about semiconductor conductivity engineering. [...]
2019 - 10.1016/j.mtphys.2018.11.006
Materials today physics, Vol. 8 (March 2019) , p. 10-17  

Vea también: autores con nombres similares
¿Le interesa recibir alertas sobre nuevos resultados de esta búsqueda?
Defina una alerta personal vía correo electrónico o subscríbase al canal RSS.