Resultados globales: 14 registros encontrados en 0.02 segundos.
Artículos, Encontrados 12 registros
Documentos de investigación, Encontrados 2 registros
Artículos Encontrados 12 registros  1 - 10siguiente  ir al registro:
1.
10 p, 1.8 MB Monolithic integration of room-temperature multifunctional BaTiO 3 -CoFe 2 O 4 epitaxial heterostructures on Si(001) / Scigaj, Mateusz (Universitat Autònoma de Barcelona. Departament de Física) ; Dix, Nico (Institut de Ciència de Materials de Barcelona) ; Gázquez Alabart, Jaume (Institut de Ciència de Materials de Barcelona) ; Varela, María (Universidad Complutense de Madrid) ; Fina Martínez, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia) ; Herranz Casabona, Gervasi (Institut de Ciència de Materials de Barcelona) ; Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona)
The multifunctional (ferromagnetic and ferroelectric) response at room temperature that is elusive in single phase multiferroic materials can be achieved in a proper combination of ferroelectric perovskites and ferrimagnetic spinel oxides in horizontal heterostructures. [...]
2016 - 10.1038/srep31870
Scientific Reports, Vol. 6 (August 2016) , art. 31870  
2.
93 p, 11.3 MB Towards Oxide Electronics : a Roadmap / Coll Bau, Mariona (Institut de Ciència de Materials de Barcelona) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; Althammer, M. (Technische Universität München. Physik-Department) ; Bibes, Manuel (Unité Mixte de Physique) ; Boschker, H. (Max Planck Institute for Solid State Research) ; Calleja, Albert (OXOLUTIA S.L.) ; Cheng, G. (Pittsburgh Quantum Institute) ; Cuoco, M. (Università di Salerno) ; Dittmann, R. (Peter Grünberg Institut) ; Dkhil, B. (Université Paris-Saclay) ; El Baggari, I. (Cornell University) ; Fanciulli, M. (University of Milano Bicocca. Department of Materials Science) ; Fina Martínez, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Fortunato, E. (CEMOP/UNINOVA) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Fujita, S. (Kyoto University) ; Garcia, V. (Unité Mixte de Physique) ; Goennenwein, S.T.B. (Technische Universität Dresden) ; Granqvist, C.G. (Upp sala University) ; Grollier, J. (Unité Mixte de Physique) ; Gross, R. (Nanosystems Initiative Munich (NIM)) ; Hagfeldt, Anders (Ecole Polytechnique Fédérale de Lausanne) ; Herranz Casabona, Gervasi (Institut de Ciència de Materials de Barcelona) ; Hono, K. (National Institute for Materials Science) ; Houwman, E. (University of Twente) ; Huijben, M. (University of Twente) ; Kalaboukhov, A. (MC2. Chalmers University of Technology) ; Keeble, D.J. (University of Dundee) ; Koster, G. (University of Twente) ; Kourkoutis, L.F. (Cornell University) ; Levy, J. (Pittsburgh Quantum Institute) ; Lira Cantú, Mónica (Institut Català de Nanociència i Nanotecnologia) ; MacManus-Driscoll, J.L. (University of Cambridge. Department of Materials Science and Metallurgy) ; Mannhart, J. (Max Planck Institute for Solid State Research) ; Martins, R. (MDM Laboratory) ; Menzel, S. (Pittsburgh Quantum Institute) ; Mikolajick, T. (Chair of Nanoelectronic Materials) ; Napari, M. (University of Cambridge. Department of Materials Science and Metallurgy) ; Nguyen, M.D. (University of Twente) ; Niklasson, G. (Upp sala University) ; Paillard, C. (University of Arkansas. Physics Department) ; Panigrahi, S. (CEMOP/UNINOVA) ; Rijnders, G. (University of Twente) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Sanchis, P. (Universitat Politècnica de València) ; Sanna, S. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Schlom, D.G. (Cornell University. Department of Material Science and Engineering) ; Schroeder, U. (NaMLab gGmbH) ; Shen, K.M. (Cornell University. Department of Physics) ; Siemon, A. (Institut für Werkstoffe der Elektrotechnik) ; Spreitzer, M. (Jožef Stefan Institute) ; Sukegawa, H. (Research Center for Magnetic and Spintronic Materials) ; Tamayo, R. (OXOLUTIA S.L.) ; van den Brink, J. (Institute for Theoretical Solid State Physics) ; Pryds, N. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Granozio, F.M. (CNR-SPIN. Naples Unit)
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. [...]
2019 - 10.1016/j.apsusc.2019.03.312
Applied surface science, Vol. 482 (July 2019) , p. 1-93  
3.
7 p, 654.3 KB Unravelling and controlling hidden imprint fields in ferroelectric capacitors / Liu, Fanmao (Institut de Ciència de Materials de Barcelona) ; Fina Martínez, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Bertacco, Riccardo (Politecnico di Milano) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona)
Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, E imp) that breaks the degeneracy of the polarization directions, favouring one of them. [...]
2016 - 10.1038/srep25028
Scientific Reports, Vol. 6 (April 2016) , art. 25028  
4.
12 p, 8.4 MB Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region / Saidl, V. (Univerzita Karlova (Praga, República Txeca)) ; Brajer, M. (Univerzita Karlova (Praga, República Txeca)) ; Horák, L. (Univerzita Karlova (Praga, República Txeca)) ; Reichlová, H. (Akademie věd České republiky) ; Výborný, K. (Akademie věd České republiky) ; Veis, M. (Univerzita Karlova (Praga, República Txeca)) ; Janda, T. (Univerzita Karlova (Praga, República Txeca)) ; Trojánek, F. (Univerzita Karlova (Praga, República Txeca)) ; Maryško, M. (Akademie věd České republiky) ; Fina Martínez, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Jungwirth, T. (The University of Nottingham) ; Němec, P. (Univerzita Karlova (Praga, República Txeca))
Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near-infrared spectral ranges. [...]
2016 - 10.1088/1367-2630/18/8/083017
New Journal of Physics, Vol. 18 (August 2016) , art. 083017  
5.
7 p, 721.1 KB In-plane tunnelling field-effect transistor integrated on Silicon / Fina Martínez, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Apachitei, Geanina (University of Warwick. Department of Physics) ; Preziosi, Daniele (Max Planck Institute of Microstructure Physics) ; Deniz, Hakan (Max Planck Institute of Microstructure Physics) ; Kriegner, Dominik (Charles University. Department of Condensed Matter Physics) ; Martí Rovirosa, Xavier (Institute of Physics) ; Alexe, Marin (University of Warwick. Department of Physics)
Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. [...]
2015 - 10.1038/srep14367
Scientific Reports, Vol. 5 (September 2015) , art. 14367  
6.
8 p, 695.2 KB Prospect for antiferromagnetic spintronics / Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Fina Martínez, Ignasi (University of Warwick. Department of Physics) ; Jungwirth, Tomas (Fyzikální ústav AV ČR)
Exploiting both spin and charge of the electron in electronic micordevices has lead to a tremendous progress in both basic condensed-matter research and microelectronic applications, resulting in the modern field of spintronics. [...]
2015 - 10.1109/TMAG.2014.2358939
IEEE transactions on magnetics, Vol. 51, issue 4 (April 2015) , art. 7109970  
7.
7 p, 5.9 MB Hidden magnetic states emergent under electric field, in a room temperature composite magnetoelectric multiferroic / Clarkson, J. D. (University of California (Berkeley). Department of Materials Science and Engineering) ; Fina Martínez, Ignasi (Institut de Ciència de Materials de Barcelona) ; Liu, Z. Q. (University of California (Berkeley). Department of Materials Science and Engineering) ; Lee, Y. (University of California (Berkeley). Department of Materials Science and Engineering) ; Kim, J. (California State University. Department of Physics) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Cordero Edwards, Rohini Kumara (Institut Català de Nanociència i Nanotecnologia) ; Wisotzki, S. (Max Planck Institute of Microstructure Physics) ; Sáncherz, F. (Institut de Ciència de Materials de Barcelona) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Hsu, S. L. (University of California (Berkeley). Department of Materials Science and Engineering) ; Ko, C. (University of California (Berkeley). Department of Materials Science and Engineering) ; Aballe, Lucía (ALBA Laboratori de Llum de Sincrotró) ; Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ; Wu, J. (University of California (Berkeley). Department of Materials Science and Engineering) ; Christen, H. M. (Oak Ridge National Laboratory. Center for Nanophase Materials Sciences) ; Heron, J. T. (Cornell University. Department of Materials Science and Engineering) ; Schlom, D. G. (Cornell University. Department of Materials Science and Engineering) ; Salahuddin, S. (University of California (Berkeley). Department of Electrical Engineering and Computer Science) ; Kioussis, N. (California State University. Department of Physics) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; Martí, X. (University of California (Berkeley). Department of Materials Science and Engineering) ; Ramesh, R. (University of California (Berkeley). Department of Materials Science and Engineering)
The ability to control a magnetic phase with an electric field is of great current interest for a variety of low power electronics in which the magnetic state is used either for information storage or logic operations. [...]
2017 - 10.1038/s41598-017-13760-y
Scientific reports, Vol. 7 (2017) , art. 15460  
8.
21 p, 2.1 MB Electric-field adjustable time-dependent magnetoelectric response in martensitic FeRh alloy / Fina Martínez, Ignasi (Institut de Ciència de Materials de Barcelona) ; Quintana, A. (Universitat Autònoma de Barcelona. Departament de Física) ; Padilla Pantoja, Jessica (Institut Català de Nanociència i Nanotecnologia) ; Martí Rovirosa, Xavier (Fyzikální ústav AV ČR) ; Macià Bros, Ferran (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ; Aballe, Lucia (ALBA Laboratori de Llum de Sincrotró) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Steady or dynamic magnetoelectric response, selectable and adjustable by only varying the amplitude of the applied electric field, is found in a multiferroic FeRh/PMN-PT device. In-operando time-dependent structural, ferroelectric, and magnetoelectric characterizations provide evidence that, as in magnetic shape memory martensitic alloys, the observed distinctive magnetoelectric responses are related to the time-dependent relative abundance of antiferromagnetic–ferromagnetic phases in FeRh, unbalanced by voltage-controlled strain. [...]
2017 - 10.1021/acsami.7b00476
ACS applied materials and interfaces, Vol. 9, issue 18 (May 2017) , p.15577−15582  
9.
3 p, 574.4 KB Modular la dependència temporal de la resposta magnetoelèctrica / Fina Martínez, Ignasi (Institut de Ciència de Materials de Barcelona) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Una recerca conjunta entre la UAB, l'ICMAB, l'ICN2 i el sincrotró ALBA ha revelat que, sota certes condicions, és possible manipular la imantació de manera molt efectiva tot utilitzant el camp elèctric, en estructures que combinen materials magnètics i piezoelèctrics. [...]
2017
UAB divulga, Maig 2017, p. 1-3  
10.
4 p, 484.5 KB Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films / Martí Rovirosa, Xavier (Institut de Ciència de Materials de Barcelona) ; Fina Martínez, Ignasi (Institut de Ciència de Materials de Barcelona) ; Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física) ; Ferrater Martorell, Cèsar (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Varela Fernández, Manuel, 1956- (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Fábrega Sánchez, Lourdes (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona)
Orthorhombic YMnO3epitaxialthin films were grown on Nb(0. 5%)-doped SrTiO3(001) substrates. Film's thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more distorted. [...]
2009 - 10.1063/1.3238287
Applied physics letters, Vol. 95, Issue 14 (October 2009) , p. 142903/1-142903/3  

Artículos : Encontrados 12 registros   1 - 10siguiente  ir al registro:
Documentos de investigación Encontrados 2 registros  
1.
Resistive switching in nanometric BaTiO3 ferroelectric junctions / Qian, Mengdi, autor. ; Fontcuberta i Griñó, Josep, supervisor acadèmic. ; Fina Martínez, Ignasi, supervisor acadèmic. ; Rodríguez Viejo, Javier, supervisor acadèmic. ; Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona.
Los condensadores ferroeléctricos están formados por dos electrodos metálicos separados por una capa ferroeléctrica, y tienen un gran potencial para dispositivos lógicos y memorias. El carácter ferroeléctrico de la barrera permite la aparición de memoria multinivel con una respuesta (resistencia R) que puede venir determinada por su historia (). [...]
Ferroelectric capacitors consist of two metallic electrodes separated by a ferroelectric layer have great potential for memory and logic devices. Here, the ferroelectric character of the barrier should allow to build multilevel of memory with a response (resistance R) that can be dictated by its previous history (cycling voltage V). [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2019.  
2.
180 p, 10.1 MB Photoresponse of ferroelectric BaTiO₃ thin films / Liu, Fanmao, autor. ; Fontcuberta i Griñó, Josep, supervisor acadèmic. ; Fina Martínez, Ignasi, supervisor acadèmic. ; Sort Viñas, Jordi, supervisor acadèmic. ; Universitat Autònoma de Barcelona. Departament de Física.
BaTiO3 es un material de óxido ferroeléctrico sin plomo. BaTiO3 películas delgadas han sido ampliamente estudiados para aplicaciones de memoria debido a su efecto de memoria de carga resultante de su naturaleza ferroeléctrica. [...]
BaTiO3 is a lead-free ferroelectric oxide material. BaTiO3 thin films have been widely studied for memory applications due to its charge memory effect resulting from its ferroelectric nature. Nowadays, the scientific community has renewed its interest on BaTiO3, because it holds characteristics that is interesting for rapidly developing areas such as photovoltaics, photoelectric sensing and photocatalysis. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2017.  

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