Resultats globals: 19 registres trobats en 0.03 segons.
Articles, 17 registres trobats
Documents de recerca, 2 registres trobats
Articles 17 registres trobats  1 - 10següent  anar al registre:
1.
25 p, 1.2 MB Control of the polarization of ferroelectric capacitors by the concurrent action of light and adsorbates / Liu, Fanmao (Institut de Ciència de Materials de Barcelona) ; Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Rappe, Andrew M. (University of Pennsylvania. Department of Chemistry) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona)
Ferroelectric perovskites hold promise of enhanced photovoltaic efficiency and photocatalytic activity. Consequently, the photoresponse of oxide ferroelectric thin films is an active field of research. [...]
2018 - 10.1021/acsami.8b05751
ACS applied materials & interfaces, Vol. 10, issue 28 (July 2018) , p. 23968-23975  
2.
14 p, 542.4 KB Reversible and magnetically unassisted voltage-driven switching of magnetization in FeRh/PMN-PT / Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ; Quintana Romero, Alberto (Universitat Autònoma de Barcelona. Departament de Física) ; Martí, Xavier (Academy of Sciences of the Czech Republic. Institute of Physics) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ; Aballe, Lucía (ALBA Laboratori de Llum de Sincrotró) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona)
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. [...]
2018 - 10.1063/1.5040184
Applied Physics Letters, Vol. 113, Issue 15 (October 2018) , art. 152901  
3.
8 p, 4.5 MB Local manipulation of metamagnetism by strain nanopatterning / Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ; Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Coy, Emerson (Adam Mickiewicz University. NanoBioMedical Centre (Poland)) ; Quintana Romero, Alberto (Universitat Autònoma de Barcelona. Departament de Física) ; Gómez-Olivella, Carles (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Esqué de los Ojos, Daniel (Universitat Autònoma de Barcelona. Departament de Física) ; Vallcorba Valls, Oriol (ALBA Laboratori de Llum de Sincrotró) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Aballe, Lucía (ALBA Laboratori de Llum de Sincrotró) ; Nogués, Josep (Institut Català de Nanociència i Nanotecnologia) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Fina, Ignasi (Institut de Ciència de Materials de Barcelona)
Among metamagnetic materials, FeRh alloys are technologically appealing due to their uncommon antiferromagnetic-to-ferromagnetic metamagnetic transition which occurs at a temperature T* just above room temperature. [...]
2020 - 10.1039/D0MH00601G
Materials Horizons, Vol. 7, Issue 8 (August 2020) , p. 2056-2062  
4.
16 p, 4.3 MB Disentangling Highly Asymmetric Magnetoelectric Effects in Engineered Multiferroic Heterostructures / Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Sireus, Verònica (Universitat Autònoma de Barcelona. Departament de Física) ; Quintana Romero, Alberto (Universitat Autònoma de Barcelona. Departament de Física) ; Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ; Casals Montserrat, Blai (Institut de Ciència de Materials de Barcelona) ; Cichelero, Rafael (Institut de Ciència de Materials de Barcelona) ; Kataja, Mikko (Institut de Ciència de Materials de Barcelona) ; Stengel, Massimiliano (Institut de Ciència de Materials de Barcelona) ; Herranz Casabona, Gervasi (Institut de Ciència de Materials de Barcelona) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Baró, M. D. (Universitat Autònoma de Barcelona. Departament de Física) ; Suriñach, Santiago (Suriñach Cornet) (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
One of the main strategies to control magnetism by voltage is the use of magnetostrictive-piezoelectric hybrid materials, such as ferromagnetic-ferroelectric heterostructures. When such heterostructures are subjected to an electric field, piezostrain-mediated effects, electronic charging, and voltage-driven oxygen migration (magnetoionics) may simultaneously occur, making the interpretation of the magnetoelectric effects not straightforward and often leading to misconceptions. [...]
2019 - 10.1103/PhysRevApplied.12.014041
Physical review applied, Vol. 12, Issue 1 (July 2019) , art. 14041  
5.
7 p, 853.2 KB Four-state ferroelectric spin-valve / Quindeau, Andy (Max Planck Institute of Microstructure Physics) ; Fina, Ignasi (University of Warwick. Department of Physics) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Apachitei, Geanina (University of Warwick. Department of Physics) ; Ferrer, Pilar (Harwell Science and Innovation Campus. Diamond Light Source) ; Nicklin, Chris (Harwell Science and Innovation Campus. Diamond Light Source) ; Pippel, Eckhard (Max Planck Institute of Microstructure Physics) ; Hesse, Dietrich (Max Planck Institute of Microstructure Physics) ; Alexe, Marin (University of Warwick. Department of Physics)
Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. [...]
2015 - 10.1038/srep09749
Scientific reports (Nature Publishing Group), Vol. 5 (May 2015) , art. 9749  
6.
10 p, 1.8 MB Monolithic integration of room-temperature multifunctional BaTiO 3 -CoFe 2 O 4 epitaxial heterostructures on Si(001) / Scigaj, Mateusz (Universitat Autònoma de Barcelona. Departament de Física) ; Dix, Nico (Institut de Ciència de Materials de Barcelona) ; Gázquez Alabart, Jaume (Institut de Ciència de Materials de Barcelona) ; Varela, María (Universidad Complutense de Madrid) ; Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia) ; Herranz Casabona, Gervasi (Institut de Ciència de Materials de Barcelona) ; Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona)
The multifunctional (ferromagnetic and ferroelectric) response at room temperature that is elusive in single phase multiferroic materials can be achieved in a proper combination of ferroelectric perovskites and ferrimagnetic spinel oxides in horizontal heterostructures. [...]
2016 - 10.1038/srep31870
Scientific reports (Nature Publishing Group), Vol. 6 (August 2016) , art. 31870  
7.
93 p, 11.3 MB Towards Oxide Electronics : a Roadmap / Coll Bau, Mariona (Institut de Ciència de Materials de Barcelona) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; Althammer, M. (Technische Universität München. Physik-Department) ; Bibes, Manuel (Unité Mixte de Physique) ; Boschker, H. (Max Planck Institute for Solid State Research) ; Calleja, Albert (OXOLUTIA S.L.) ; Cheng, G. (Pittsburgh Quantum Institute) ; Cuoco, M. (Università di Salerno) ; Dittmann, R. (Peter Grünberg Institut) ; Dkhil, B. (Université Paris-Saclay) ; El Baggari, I. (Cornell University) ; Fanciulli, M. (University of Milano Bicocca. Department of Materials Science) ; Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Fortunato, E. (CEMOP/UNINOVA) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Fujita, S. (Kyoto University) ; Garcia, V. (Unité Mixte de Physique) ; Goennenwein, S.T.B. (Technische Universität Dresden) ; Granqvist, C.G. (Upp sala University) ; Grollier, J. (Unité Mixte de Physique) ; Gross, R. (Nanosystems Initiative Munich (NIM)) ; Hagfeldt, Anders (Ecole Polytechnique Fédérale de Lausanne) ; Herranz Casabona, Gervasi (Institut de Ciència de Materials de Barcelona) ; Hono, K. (National Institute for Materials Science) ; Houwman, E. (University of Twente) ; Huijben, M. (University of Twente) ; Kalaboukhov, A. (MC2. Chalmers University of Technology) ; Keeble, D.J. (University of Dundee) ; Koster, G. (University of Twente) ; Kourkoutis, L.F. (Cornell University) ; Levy, J. (Pittsburgh Quantum Institute) ; Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia) ; MacManus-Driscoll, J.L. (University of Cambridge. Department of Materials Science and Metallurgy) ; Mannhart, J. (Max Planck Institute for Solid State Research) ; Martins, R. (MDM Laboratory) ; Menzel, S. (Pittsburgh Quantum Institute) ; Mikolajick, T. (Chair of Nanoelectronic Materials) ; Napari, M. (University of Cambridge. Department of Materials Science and Metallurgy) ; Nguyen, M.D. (University of Twente) ; Niklasson, G. (Upp sala University) ; Paillard, C. (University of Arkansas. Physics Department) ; Panigrahi, S. (CEMOP/UNINOVA) ; Rijnders, G. (University of Twente) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Sanchis, P. (Universitat Politècnica de València) ; Sanna, S. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Schlom, D.G. (Cornell University. Department of Material Science and Engineering) ; Schroeder, U. (NaMLab gGmbH) ; Shen, K.M. (Cornell University. Department of Physics) ; Siemon, A. (Institut für Werkstoffe der Elektrotechnik) ; Spreitzer, M. (Jožef Stefan Institute) ; Sukegawa, H. (Research Center for Magnetic and Spintronic Materials) ; Tamayo, R. (OXOLUTIA S.L.) ; van den Brink, J. (Institute for Theoretical Solid State Physics) ; Pryds, N. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Granozio, F.M. (CNR-SPIN. Naples Unit)
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. [...]
2019 - 10.1016/j.apsusc.2019.03.312
Applied surface science, Vol. 482 (July 2019) , p. 1-93  
8.
7 p, 654.3 KB Unravelling and controlling hidden imprint fields in ferroelectric capacitors / Liu, Fanmao (Institut de Ciència de Materials de Barcelona) ; Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Bertacco, Riccardo (Politecnico di Milano) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona)
Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, E imp) that breaks the degeneracy of the polarization directions, favouring one of them. [...]
2016 - 10.1038/srep25028
Scientific reports (Nature Publishing Group), Vol. 6 (April 2016) , art. 25028  
9.
12 p, 8.4 MB Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region / Saidl, V. (Univerzita Karlova (Praga, República Txeca)) ; Brajer, M. (Univerzita Karlova (Praga, República Txeca)) ; Horák, L. (Univerzita Karlova (Praga, República Txeca)) ; Reichlová, H. (Akademie věd České republiky) ; Výborný, K. (Akademie věd České republiky) ; Veis, M. (Univerzita Karlova (Praga, República Txeca)) ; Janda, T. (Univerzita Karlova (Praga, República Txeca)) ; Trojánek, F. (Univerzita Karlova (Praga, República Txeca)) ; Maryško, M. (Akademie věd České republiky) ; Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Jungwirth, T. (The University of Nottingham) ; Němec, P. (Univerzita Karlova (Praga, República Txeca))
Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near-infrared spectral ranges. [...]
2016 - 10.1088/1367-2630/18/8/083017
New journal of physics, Vol. 18 (August 2016) , art. 083017  
10.
7 p, 721.1 KB In-plane tunnelling field-effect transistor integrated on Silicon / Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Apachitei, Geanina (University of Warwick. Department of Physics) ; Preziosi, Daniele (Max Planck Institute of Microstructure Physics) ; Deniz, Hakan (Max Planck Institute of Microstructure Physics) ; Kriegner, Dominik (Charles University. Department of Condensed Matter Physics) ; Martí Rovirosa, Xavier (Institute of Physics) ; Alexe, Marin (University of Warwick. Department of Physics)
Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. [...]
2015 - 10.1038/srep14367
Scientific reports (Nature Publishing Group), Vol. 5 (September 2015) , art. 14367  

Articles : 17 registres trobats   1 - 10següent  anar al registre:
Documents de recerca 2 registres trobats  
1.
144 p, 4.2 MB Resistive switching in nanometric BaTiO3 ferroelectric junctions / Qian, Mengdi ; Fontcuberta i Griñó, Josep, dir. ; Fina, Ignasi, dir. ; Rodríguez-Viejo, Javier, dir. ; Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona
Los condensadores ferroeléctricos están formados por dos electrodos metálicos separados por una capa ferroeléctrica, y tienen un gran potencial para dispositivos lógicos y memorias. El carácter ferroeléctrico de la barrera permite la aparición de memoria multinivel con una respuesta (resistencia R) que puede venir determinada por su historia (). [...]
Ferroelectric capacitors consist of two metallic electrodes separated by a ferroelectric layer have great potential for memory and logic devices. Here, the ferroelectric character of the barrier should allow to build multilevel of memory with a response (resistance R) that can be dictated by its previous history (cycling voltage V). [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2019.  
2.
180 p, 10.1 MB Photoresponse of ferroelectric BaTiO₃ thin films / Liu, Fanmao ; Fontcuberta i Griñó, Josep, dir. ; Fina, Ignasi, dir. ; Sort Viñas, Jordi, dir. ; Universitat Autònoma de Barcelona. Departament de Física
BaTiO3 es un material de óxido ferroeléctrico sin plomo. BaTiO3 películas delgadas han sido ampliamente estudiados para aplicaciones de memoria debido a su efecto de memoria de carga resultante de su naturaleza ferroeléctrica. [...]
BaTiO3 is a lead-free ferroelectric oxide material. BaTiO3 thin films have been widely studied for memory applications due to its charge memory effect resulting from its ferroelectric nature. Nowadays, the scientific community has renewed its interest on BaTiO3, because it holds characteristics that is interesting for rapidly developing areas such as photovoltaics, photoelectric sensing and photocatalysis. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2017.  

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