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Resultats globals: 5 registres trobats en 0.02 segons.
Articles, 5 registres trobats
Articles 5 registres trobats  
1.
7 p, 4.6 MB Valley-polarized quantum transport generated by gauge fields in graphene / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. [...]
2017 - 10.1088/2053-1583/aa7cbd
2D Materials, Vol. 4, issue 3 (September 2017) , art. 31006  
Registre complet -
2.
81 p, 4.0 MB Charge, spin and valley Hall effects in disordered grapheme / Cresti, Alessandro (Université Grenoble Alpes) ; Nikolíc, B.K. (University of Delaware. Department of Physics and Astronomy) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of e2/h, has been the first fascinating manifestation of the topological state of matter driven by magnetic field and disorder, and related to the formation of non-dissipative current flow. [...]
2016 - 10.1393/ncr/i2016-10130-6
Rivista del nuovo cimento, Vol. 39, issue 12 (December 2016) , p. 587-667  
Registre complet - Creative Commons
3.
19 p, 1.3 MB Spin hall effect and weak antilocalization in graphene/transition metal dichalcogenide heterostructures / Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. [...]
2017 - 10.1021/acs.nanolett.7b02364
Nano letters, Vol. 17, issue 8 (Sep. 2017) , p. 5078-5083  
Registre complet -
4.
12 p, 1.1 MB Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2 /graphene/ h -BN heterostructures / Zihlmann, Simon (Universität Basel. Department of Physics) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Kedves, Máté (Budapesti Müszaki és Gazdaságtudományi Egyetem.Department of Physics) ; Watanabe, Kenji (National Institute for Material Science (Tsukuba, Japan)) ; Taniguchi, Takashi (National Institute for Material Science (Tsukuba, Japan)) ; Schönenberger, Christian (Universität Basel. Department of Physics) ; Makk, Péter (Universität Basel. Department of Physics)
Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition-metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit coupling and its relaxation mechanism remained unknown. [...]
2018 - 10.1103/PhysRevB.97.075434
Physical review B, Vol. 97, issue 7 (Feb. 2018) , p. 75434  
Registre complet -
5.
9 p, 997.0 KB Giant spin lifetime anisotropy in graphene induced by proximity effects / Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Fabian, Jaroslav (Universität Regensburg. Insitute for Theoretical Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on fundamental aspects of spin dynamics in heterostructures of graphene and transition metal dichalcogenides (TMDCs). By using realistic models derived from first principles we compute the spin lifetime anisotropy, defined as the ratio of lifetimes for spins pointing out of the graphene plane to those pointing in the plane. [...]
2017 - 10.1103/PhysRevLett.119.206601
Physical review letters, Vol. 119 issue 20 (Nov. 2017) , p. 206601  
Registre complet -

Vegeu també: autors amb noms similars
4 GARCÍA, J.A.
1 Garcia, J Rodriguez
7 Garcia, J.
1 Garcia, J. A.
1 Garcia, J. D.
4 Garcia, J.A.
2 Garcia, J.D.
3 Garcia, J.E.
1 Garcia, Jaume
2 Garcia, Javier
5 Garcia, Joan
1 Garcia, Josiane da Silva
1 Garcia, Julio Cesar Oliveira
7 García, J.
2 García, J. Eduardo
1 García, J. L.
1 García, J. M.
1 García, J. R.
4 García, J.A.
2 García, J.D.
3 García, J.E.
1 García, J.F.
1 García, J.I.
1 García, J.N.
1 García, JD.
1 García, Jaime
2 García, Javier
2 García, Javier
5 García, Joan
1 García, Joaquín
5 García, Jorge
3 García, Jose Luis
3 García, José Luis
3 García, José Luís
3 García, José Ramon
3 García, José Ramón
1 García, José,
1 García, Juan
2 García, Juan Antonio
2 García, Juan Carlos
1 García, Juan Ignacio
1 García, Juan Luis
1 García, Juana
2 García, Juli
1 García, Julián
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