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Articles, 15 registres trobats
Articles 15 registres trobats  1 - 10següent  anar al registre:
1.
19 p, 2.2 MB Understanding the bias dependence of low frequency noise in single layer graphene FETs / Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia) ; Jiménez, David 1970- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain bias conditions for different channel lengths. [...]
2018 - 10.1039/c8nr04939d
Nanoscale, Vol. 10, Issue 31 (August 2018) , p. 14947-14956  
2.
7 p, 1.0 MB Impact of contact overlap on transconductance and noise in organic electrochemical transistors / Polyravas, Anastasios G. (University of Cambridge. Department of Engineering) ; Curto, Vincenzo F. (University of Cambridge. Department of Engineering) ; Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia) ; Malliaras, George G. (University of Cambridge. Department of Engineering)
Organic electrochemical transistors (OECTs) from poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) are used as amplifying transducers for bioelectronics. Although the impact on performance of device geometry parameters such as channel area and thickness has been widely explored, the overlap between the semiconductor film and the source and drain contacts has not been considered. [...]
2019 - 10.1088/2058-8585/ab4dc4
Flexible and printed electronics, Vol. 4, Núm. 4 (December 2019) , art. 44003  
3.
Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors / Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Wei, Wei (Institute of Electronics, Microelectronics and Nanotechnology) ; Pallecchi, Emiliano (Institute of Electronics, Microelectronics and Nanotechnology) ; Vignaud, Dominique (Institute of Electronics, Microelectronics and Nanotechnology) ; Happy, Henri (Institute of Electronics, Microelectronics and Nanotechnology) ; Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia) ; Jiménez, David 1970- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Graphene devices for analog and radio frequency (RF) applications are prone to low frequency noise (LFN) due to its up conversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors (GFETs) that operate at high electric fields in order to ensure a high speed. [...]
2019 - 10.1021/acsaelm.9b00604
ACS applied electronic materials, Vol. 1, Issue 12 (December 2019) , p. 2626-2636  
4.
9 p, 1.4 MB Crossover from ballistic to diffusive thermal transport in suspended graphene membranes / Sachat, Alexandros el (Institut Català de Nanociència i Nanotecnologia) ; Köenemann, F. (IBM Research) ; Menges, F. (University of Colorado. Department of Physics) ; Del Corro García, Elena (Institut Català de Nanociència i Nanotecnologia) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Gotsmann, B. (IBM Research)
We report heat transport measurements on suspended single-layer graphene disks with radius of 150-1600 nm using a high-vacuum scanning thermal microscope. The results of this study revealed a radius-dependent thermal contact resistance between tip and graphene, with values between 1. [...]
2019 - 10.1088/2053-1583/ab097d
2D Materials, Vol. 6, Núm. 2 (April 2019) , art. 25034  
5.
12 p, 8.3 MB Flexible graphene transistors for recording cell action potentials / Blaschke, Benno M. (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Lottner, Martin (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Drieschner, Simon (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Stoiber, Karolina (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Rousseau, Lionel (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Lissourges, Gaëlle (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfills important key requirements for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. [...]
2016 - 10.1088/2053-1583/3/2/025007
2D Materials, Vol. 3, issue 2 (June 2016) , art. 25007  
6.
21 p, 1.9 MB High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors / Masvidal Codina, Eduard (Institut de Microelectrònica de Barcelona) ; Illa Vila, Xavier (Institut de Microelectrònica de Barcelona) ; Dasilva, Miguel (Institut d'Investigacions Biomèdiques August Pi i Sunyer) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Dragojević, Tanja (ICFO-Institut de Ciéncies Fotòniques) ; Vidal Rosas, Ernesto E. (ICFO-Institut de Ciéncies Fotòniques) ; Prats Alfonso, Elisabet (Institut de Microelectrònica de Barcelona) ; Martínez Aguilar, Javier (Institut de Microelectrònica de Barcelona) ; De la Cruz Sánchez, José M. (Institut Català de Nanociència i Nanotecnologia) ; Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Godignon, Philippe (Institut de Microelectrònica de Barcelona) ; Rius Suñé, Gemma (Institut de Microelectrònica de Barcelona) ; Camassa, Alessandra (Institut d'Investigacions Biomèdiques August Pi i Sunyer) ; Del Corro García, Elena (Institut Català de Nanociència i Nanotecnologia) ; Bousquet, Jessica (Institut Català de Nanociència i Nanotecnologia) ; Hébert, Clement (Institut Català de Nanociència i Nanotecnologia) ; Durduran, Turgut (Institució Catalana de Recerca i Estudis Avançats) ; Villa, Rosa (Institut de Microelectrònica de Barcelona) ; Sánchez-Vives, María V. (Institució Catalana de Recerca i Estudis Avançats) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia) ; Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona)
Recording infraslow brain signals (<0. 1 Hz) with microelectrodes is severely hampered by current microelectrode materials, primarily due to limitations resulting from voltage drift and high electrode impedance. [...]
2019 - 10.1038/s41563-018-0249-4
Nature materials, Vol. 18, Issue 3 (March 2019) , p. 280-288
2 documents
7.
11 p, 5.4 MB Versatile Graphene-Based Platform for Robust Nanobiohybrid Interfaces / Bueno, Rebeca (Institute of Materials Science of Madrid) ; Marciello, Marzia (Universidad Complutense de Madrid) ; Moreno, Miguel (Centro de Astrobiología) ; Sánchez Sánchez, Carlos (Institute of Materials Science of Madrid) ; Martínez, José I. (Institute of Materials Science of Madrid) ; Martínez, Lidia (Institute of Materials Science of Madrid) ; Prats Alfonso, Elisabet (Institut de Microelectrònica de Barcelona) ; Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia) ; Villa, Rosa (Institut de Microelectrònica de Barcelona) ; Mompean, Federico (Institute of Materials Science of Madrid) ; García Hernández, Mar (Institute of Materials Science of Madrid) ; Huttel, Yves (Institute of Materials Science of Madrid) ; Morales, María del Puerto (Institute of Materials Science of Madrid) ; Briones, Carlos (Centro de Astrobiología) ; López, María F. (Institute of Materials Science of Madrid) ; Ellis, Gary J. (Institute of Polymer Science and Technology) ; Vázquez, Luis (Institute of Materials Science of Madrid) ; Martín Gago, José A. (Institute of Materials Science of Madrid)
Technologically useful and robust graphene-based interfaces for devices require the introduction of highly selective, stable, and covalently bonded functionalities on the graphene surface, whilst essentially retaining the electronic properties of the pristine layer. [...]
2019 - 10.1021/acsomega.8b03152
ACS omega, Vol. 4, Issue 2 (February 2019) , p. 3287-3297  
8.
19 p, 8.9 MB Uniformly coated highly porous graphene/MnO2 foams for flexible asymmetric supercapacitors / Drieschner, Simon (Technische Universität München) ; Seckendorff, Maximilian Von (Technische Universität München) ; Del Corro García, Elena (Institut Català de Nanociència i Nanotecnologia) ; Wohlketzetter, Jörg (Technische Universität München) ; Blaschke, Benno M. (Technische Universität München) ; Stutzmann, Martin (Technische Universität München) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)
Supercapacitors are called to play a prominent role in the newly emerging markets of electric vehicles, flexible displays and sensors, and wearable electronics. In order to compete with current battery technology, supercapacitors have to be designed with highly conductive current collectors exhibiting high surface area per unit volume and uniformly coated with pseudocapacitive materials, which is crucial to boost the energy density while maintaining a high power density. [...]
2018 - 10.1088/1361-6528/aab4c2
Nanotechnology, Vol. 29, Núm. 22 (April 2018) , art. 225402  
9.
214 p, 55.9 MB Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems / Ferrari, Andrea C. (University of Cambridge) ; Bonaccorso, Francesco (Istituto Italiano di Tecnologia) ; Fal'ko, Vladimir (Lancaster University. Department of Physics) ; Novoselov, Konstantin S. (University of Manchester) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Bøggild, Peter (Technical University of Denmark) ; Borini, Stefano (Nokia Technologies) ; Koppens, Frank H.L. (Institut de Ciències Fotòniques) ; Palermo, Vincenzo (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ; Pugno, Nicola (Queen Mary University of London) ; Garrido Ariza, José A. (Technische Universität München) ; Sordan, Roman (Politecnico di Milano) ; Bianco, Alberto (Institut de Biologie Moleculaire et Cellulaire) ; Ballerini, Laura (Università di Trieste) ; Prato, Maurizio (Università di Trieste. Dipartimento di Scienze Farmaceutiche) ; Lidorikis, Elefterios (University of Ioannina. Department of Materials Science and Engineering) ; Kivioja, Jani (Nokia Technologies) ; Marinelli, Claudio (Wilton Centre) ; Ryhänen, Tapani (Nokia Technologies) ; Morpurgo, Alberto (Université de Genève. Département de Physique de la Matière Condensée) ; Coleman, Jonathan N. (Trinity College) ; Nicolosi, Valeria (Trinity College) ; Colombo, Luigi (Texas Instruments Incorporated) ; Fert, Albert (Université de Paris-Sud) ; García Hernández, Mar (Instituto de Ciencia de Materiales de Madrid) ; Bachtold, Adrian (Institut de Ciències Fotòniques) ; Schneider, Gregory F. (Leiden University) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Dekker, Cees (Delft University of Technology) ; Barbone, Matteo (University of Cambridge) ; Sun, Zhipei (University of Cambridge) ; Galiotis, Costas (University of Patras. Department of Chemical Engineering) ; Grigorenko, Alexander N. (University of Manchester) ; Konstantatos, Gerasimos (Institut de Ciències Fotòniques) ; Kis, Andras (Ecole Polytechique Fédérale de Lausanne) ; Katsnelson, Mikhail (Radboud University Nijmegen) ; Vandersypen, Lieven (Delft University of Technology) ; Loiseau, Annick (Laboratoire d'Etude des Microstructures) ; Morandi, Vittorio (CNR-Istituto per la Microelettronica e i Microsistemi) ; Neumaier, Daniel (Advanced Microelectronic Centre Aachen) ; Treossi, Emanuele (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ; Pellegrini, Vittorio (Scuola Normale Superiore) ; Polini, Marco (Scuola Normale Superiore) ; Tredicucci, Alessandro (Scuola Normale Superiore) ; Williams, Gareth M. (Airbus UK Ltd) ; Hee Hong, Byung (Seoul National University. Department of Chemistry) ; Ahn, Jong Hyun (Yonsei University) ; Kim, Jong Min (University of Oxford. Department of Engineering Science) ; Zirath, Herbert (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ; Van Wees, Bart J. (University of Groningen) ; Van Der Zant, Herre S.J. (Delft University of Technology) ; Occhipinti, Luigi (STMicroelectronics) ; Di Matteo, Andrea (STMicroelectronics) ; Kinloch, Ian A. (University of Manchester) ; Seyller, Thomas (Technische Universität Chemnitz) ; Quesnel, Etienne (Institut LITEN) ; Feng, Xinliang (Max-Planck-Institut für Polymerforschung) ; Teo, Ken (Aixtron Ltd.) ; Rupesinghe, Nalin (Aixtron Ltd.) ; Hakonen, Pertti (Aalto University) ; Neil, Simon R.T. (CambridgeIP) ; Tannock, Quentin (CambridgeIP) ; Löfwander, Tomas (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ; Kinaret, Jari (Chalmers University of Technology. Department of Applied Physics)
We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. [...]
2015 - 10.1039/c4nr01600a
Nanoscale, Vol. 7, Issue 11 (March 2015) , p. 4598-4810  
10.
8 p, 9.3 MB Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy / Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ; Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ; Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ; Garrido Ariza, José A. (Technische Universität München. Walter Schottky Institute) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)) ; Magén, César (Universidad de Zaragoza. Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ; ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779  

Articles : 15 registres trobats   1 - 10següent  anar al registre:
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