Home > Search Results: Givan, U.
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Articles, 3 records found
Articles 3 records found  
1.
37 p, 2.3 MB Disentangling phonon channels in nanoscale heat transport / Mukherjee, Samik (École Polytechnique de Montréal. Département de génie physique) ; Wajs, Marcin (École Polytechnique de Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Givan, Uri (Max Planck Institute of Microstructure Physics) ; Senz, Stephan (Max Planck Institute of Microstructure Physics) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Francoeur, Sebastien (École Polytechnique de Montréal. Département de génie physique) ; Moutanabbir, Oussama (École Polytechnique de Montréal. Département de génie physique)
Phonon surface scattering has been at the core of heat transport engineering in nanoscale devices. Herein, we demonstrate that this phonon pathway can be the sole mechanism only below a critical, size-dependent temperature. [...]
2021 - 10.1103/PhysRevB.104.075429
Physical review B, Vol. 104, issue 7 (August 2021) , art. 75429  
Detailed record -
2.
28 p, 1.9 MB Reduction of Thermal Conductivity in Nanowires by Combined Engineering of Crystal Phase and Isotope Disorder / Mukherjee, Samik (Polytechnique Montréal. Département de génie physique) ; Givan, Uri (Max Planck Institute of Microstructure Physics) ; Senz, Stephan (Max Planck Institute of Microstructure Physics) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Moutanabbir, Oussama (École Polytechnique de Montréal. Department of Engineering Physics)
Nanowires are a versatile platform to investigate and harness phonon and thermal transport phenomena in nanoscale systems. With this perspective, we demonstrate herein the use of crystal phase and mass disorder as effective degrees of freedom to manipulate the behavior of phonons and control the flow of local heat in silicon nanowires. [...]
2018 - 10.1021/acs.nanolett.8b00612
Nano letters, Vol. 18, Issue 5 (May 2018) , p. 3066-3075  
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3.
10 p, 4.7 MB Phonon engineering in isotopically disordered silicon nanowires / Mukherjee, Samik (Polytechnique Montréal. Département de génie physique) ; Givan, Uri (Max-Planck-Institut für Mikrostrukturphysik) ; Senz, Stephan (Max-Planck-Institut für Mikrostrukturphysik) ; Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ; Francoeur, S. (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ; Itoh, K. M. (Keio University. Department of Applied Physics and Physico-Informatics) ; Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ; Seidman, D. N. (Northwestern University. Department of Materials Science and Engineering) ; Moutanabbir, Oussama (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893  
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