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Resultats globals: 6 registres trobats en 0.02 segons.
Articles, 6 registres trobats
Articles 6 registres trobats  
1.
10 p, 5.6 MB Experimental Demonstration of a Magnetically Induced Warping Transition in a Topological Insulator Mediated by Rare-Earth Surface Dopants / Muñiz Cano, Beatriz (IMDEA Nanociencia) ; Ferreiros, Yago (IMDEA Nanociencia) ; Pantaleón, Pierre A. (IMDEA Nanociencia) ; Dai, Ji (ALBA Laboratori de Llum de Sincrotró) ; Tallarida, Massimo (ALBA Laboratori de Llum de Sincrotró) ; Figueroa García, Adriana Isabel (Institut Català de Nanociència i Nanotecnologia) ; Marinova, Vera (Institute of Optical Materials and Technologies Acad. G. Bontchev) ; García-Díez, Kevin (Institut Català de Nanociència i Nanotecnologia) ; Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Miranda, Rodolfo (Universidad Autónoma de Madrid) ; Camarero, Julio (Universidad Autónoma de Madrid. Departamento de Física de la Materia Condensada) ; Guinea, Francisco (IMDEA Nanociencia) ; Silva-Guillén, Jose Angel (IMDEA Nanociencia) ; Valbuena, Miguel Ángel (IMDEA Nanociencia)
Magnetic topological insulators constitute a novel class of materials whose topological surface states (TSSs) coexist with long-range ferromagnetic order, eventually breaking time-reversal symmetry. The subsequent bandgap opening is predicted to co-occur with a distortion of the TSS warped shape from hexagonal to trigonal. [...]
2023 - 10.1021/acs.nanolett.3c00587
Nano letters, Vol. 23, Issue 13 (July 2023) , p. 6249-6258  
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2.
14 p, 2.2 MB Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS3 : electron doping and plasmons / Silva-Guillén, Jose Angel (Fundación IMDEA Nanociencia) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Guinea, Francisco (University of Manchester. Department of Physics and Astronomy) ; Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid)
Analysis of the band structure of TiS single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital composition. [...]
2017 - 10.1088/2053-1583/aa6b92
2D Materials, Vol. 4, Núm. 2 (June 2017) , art. 25085  
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3.
10 p, 331.0 KB Electronic properties of single-layer and multilayer transition metal dichalcogenides MX₂ (M = Mo, W and X = S, Se) / Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid) ; Silva-Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia) ; López-Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Cappelluti, Emmanuele (Consiglio Nazionale delle Ricerche. Istituto de Sistemi Complessi) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. [...]
2014 - 10.1002/andp.201400128
Annalen der Physik, Vol. 526, issue 9-10 (Oct. 2014) , p. 347-357  
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4.
13 p, 2.2 MB Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides / Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid) ; López Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Cappelluti, Emmanuele (Istituto de Sistemi Complessi) ; Silva-Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMDs) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. [...]
2014 - 10.1088/2053-1583/1/3/034003
2D Materials, Vol. 1, Núm. 3 (December 2014) , art. 34003  
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5.
11 p, 3.4 MB Electronic structure of 2H-NbSe₂ single-layers in the CDW state / Silva-Guillén, Jose Angel (Fundación IMDEA Nanociencia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Guinea, Francisco (Fundación IMDEA Nanociencia) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona)
Adensity functional theory study of NbSe₂"Qsingle-layers in the normal non-modulated and the 3xQ3 CDW states is reported. Weshow that, in the single layer, the CDW barely affects the Fermi surface of the system, thus ruling out a nesting mechanism as the driving force for the modulation. [...]
2016 - 10.1088/2053-1583/3/3/035028
2D Materials, Vol. 3, no. 3 (Sep. 2016) , art. 35028  
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6.
214 p, 55.9 MB Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems / Ferrari, Andrea C. (University of Cambridge) ; Bonaccorso, Francesco (Istituto Italiano di Tecnologia) ; Fal'ko, Vladimir (Lancaster University. Department of Physics) ; Novoselov, Konstantin S. (University of Manchester) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Bøggild, Peter (Technical University of Denmark) ; Borini, Stefano (Nokia Technologies) ; Koppens, Frank (Institut de Ciències Fotòniques) ; Palermo, Vincenzo (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ; Pugno, Nicola (Queen Mary University of London) ; Garrido, Jose (Technische Universität München) ; Sordan, Roman (Politecnico di Milano) ; Bianco, Alberto (Institut de Biologie Moleculaire et Cellulaire) ; Ballerini, Laura (Università di Trieste) ; Prato, Maurizio (Università di Trieste. Dipartimento di Scienze Farmaceutiche) ; Lidorikis, Elefterios (University of Ioannina. Department of Materials Science and Engineering) ; Kivioja, Jani (Nokia Technologies) ; Marinelli, Claudio (Wilton Centre) ; Ryhänen, Tapani (Nokia Technologies) ; Morpurgo, Alberto (Université de Genève. Département de Physique de la Matière Condensée) ; Coleman, Jonathan N. (Trinity College) ; Nicolosi, Valeria (Trinity College) ; Colombo, Luigi (Texas Instruments Incorporated) ; Fert, Albert (Université de Paris-Sud) ; Garcia-Hernandez, Mar (Instituto de Ciencia de Materiales de Madrid) ; Bachtold, Adrian (Institut de Ciències Fotòniques) ; Schneider, Gregory F. (Leiden University) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Dekker, Cees (Delft University of Technology) ; Barbone, Matteo (University of Cambridge) ; Sun, Zhipei (University of Cambridge) ; Galiotis, Costas (University of Patras. Department of Chemical Engineering) ; Grigorenko, Alexander N. (University of Manchester) ; Konstantatos, Gerasimos (Institut de Ciències Fotòniques) ; Kis, Andras (Ecole Polytechique Fédérale de Lausanne) ; Katsnelson, Mikhail (Radboud University Nijmegen) ; Vandersypen, Lieven (Delft University of Technology) ; Loiseau, Annick (Laboratoire d'Etude des Microstructures) ; Morandi, Vittorio (CNR-Istituto per la Microelettronica e i Microsistemi) ; Neumaier, Daniel (Advanced Microelectronic Centre Aachen) ; Treossi, Emanuele (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ; Pellegrini, Vittorio (Scuola Normale Superiore (Pisa, Itàlia)) ; Polini, Marco (Scuola Normale Superiore (Pisa, Itàlia)) ; Tredicucci, Alessandro (Scuola Normale Superiore (Pisa, Itàlia)) ; Williams, Gareth M. (Airbus UK Ltd) ; Hee Hong, Byung (Seoul National University. Department of Chemistry) ; Ahn, Jong-Hyun (Yonsei University) ; Kim, Jong Min (University of Oxford. Department of Engineering Science) ; Zirath, Herbert (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ; Van Wees, Bart J. (University of Groningen) ; Van Der Zant, Herre S. J. (Delft University of Technology) ; Occhipinti, Luigi (STMicroelectronics) ; Di Matteo, Andrea (STMicroelectronics) ; Kinloch, Ian A. (University of Manchester) ; Seyller, Thomas (Technische Universität Chemnitz) ; Quesnel, Etienne (Institut LITEN) ; Feng, Xinliang (Max-Planck-Institut für Polymerforschung) ; Teo, Ken (Aixtron Ltd.) ; Rupesinghe, Nalin (Aixtron Ltd.) ; Hakonen, Pertti (Aalto University) ; Neil, Simon R. T. (CambridgeIP) ; Tannock, Quentin (CambridgeIP) ; Löfwander, Tomas (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ; Kinaret, Jari (Chalmers University of Technology. Department of Applied Physics)
We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. [...]
2015 - 10.1039/c4nr01600a
Nanoscale, Vol. 7, Issue 11 (March 2015) , p. 4598-4810  
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