Resultados globales: 3 registros encontrados en 0.04 segundos.
Artículos, Encontrados 3 registros
Artículos Encontrados 3 registros  
1.
6 p, 657.0 KB Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating / Russell, Stephen (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; McConville, Christopher F. (RMIT University. College of Science, Engineering and Health) ; Fisher, Craig (University of Warwick, School of Engineering) ; Hamilton, Dean P. (University of Warwick, School of Engineering) ; Mawby, Philip A. (University of Warwick, School of Engineering) ; Jennings, Michael R. (University of Warwick, School of Engineering)
A method to improve thermal management of \beta-GaO FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. [...]
2017 - 10.1109/JEDS.2017.2706321
IEEE Journal of the Electron Devices Society, Vol. 5, issue 4 (july 2017) , p. 256-261  
2.
7 p, 2.6 MB A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability / Li, Fan (University of Warwick) ; Mawby, Philip A. (University of Warwick) ; Song, Qiu (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick) ; Sharma, Yogesh (Dynex Semiconductor Ltd.) ; Hamilton, Dean P. (De Montfort University) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Jennings, M.R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242  
3.
15 p, 1.3 MB High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs / Hamilton, Dean P. (University of Warwick) ; Jennings, M.R. (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Russell, Stephen A.O. (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Fisher, C.A. (University of Warwick) ; Mawby, Philip A. (University of Warwick)
The temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. [...]
2017 - 10.1109/TPEL.2016.2636743
IEEE transactions on power electronics, Vol. 32, Issue 10 (October 2017) , p. 7967-7979  

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2 Hamilton, D.P.
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