Hernández, Eduardo Rafael - Search Results - UAB Digital Repository of Documents

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141 p, 1.4 MB

Theoretical studies of defects in silicon carbide / Rurali, Riccardo ; Hernández, Eduardo Rafael, dir. (Consejo Superior de Investigaciones Científicas (Espanya)) ; Godignon, Philippe, dir. (Consejo Superior de Investigaciones Científicas (Espanya))
Cálculos de estructura electrónica han sido utilizados para el estudio de la estructura, de la difusividad y de la actividad eléctrica de defectos puntuales en carburo de silicio. En particular, se han considerado impurezas de tipo n y de tipo p, boro, nitrógeno y fósforo, juntas con defectos intrínsecos, como las vacantes del cristal. [...]
Electronic structure calculations have been used to study the structure, the diffusivity and the electrical activity of point defects in silicon carbide. Particularly, p-type and n-type impurities have been considered, namely boron, nitrogen and phosphorus, together with intrinsic defects, specifically vacancies of the host crystal. [...]
Bellaterra : Universitat Autònoma de Barcelona, 2004

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See also: similar author names
1	Hernandez, E.E.L.
1	Hernandez, Elein
38	Hernandez, Enrique
4	Hernàndez, Eulalia
4	Hernàndez, Eulàlia
1	Hernández, E. M.
3	Hernández, Eduardo R.
1	Hernández, Eduardo Rafael,
2	Hernández, Elena
1	Hernández, Elisa
1	Hernández, Elvira
38	Hernández, Enrique
4	Hernández, Enrique,
1	Hernández, Enrique, 0000-0002-9219-9293
2	Hernández, Eugenio
4	Hernández, Eulalia
4	Hernández, Eulàlia

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