Results overview: Found 2 records in 0.02 seconds.
Articles, 2 records found
Articles 2 records found  
1.
8 p, 2.1 MB Long-lived excitons in GaN/AlN nanowire heterostructures / Beeler, Mark (Commissariat à l’énergie atomique et aux énergies alternatives (França)) ; Lim, Caroline B. (Commissariat à l’énergie atomique et aux énergies alternatives (França)) ; Hille, Pascal (Justus Liebig-Universität Gießen. Physikalisches Institut) ; Bleuse, Joel (Commissariat à l’énergie atomique et aux énergies alternatives (França)) ; Schörmann, J. (I. Physikalisches Institut, Justus-Liebig-Universität Gießen) ; De La Mata, Maria (Institut de Ciència dels Materials de Barcelona) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, M. (I. Physikalisches Institut, Justus-Liebig-Universität Gießen) ; Monroy, Eva (Commissariat à l’énergie atomique et aux énergies alternatives (França))
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. [...]
2015 - 10.1103/PhysRevB.91.205440
Physical Review B, Vol. 91, issue 20 (May 2015) , art. 205440  
2.
15 p, 3.9 MB UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices / Lähnemann, Jonas (University Grenoble Alpes) ; Den Hertog, Martien (Institut Nèel (Grenoble, França)) ; Hille, Pascal (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Mata Fernández, María de la (Institut Catalá de Nanociència i Nanotecnologia) ; Fournier, Thierry (Institut Nèel (Grenoble, França)) ; Schörmann, Jörg (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Monroy, Eva (University Grenoble Alpes)
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. [...]
2016 - 10.1021/acs.nanolett.6b00806
Nano Letters, Vol. 16, Num. 5 (May 2016) , p. 3260-3267  

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