Hindmarsh, Steven A. - Resultados de la búsqueda - Depósito Digital de Documentos de la UAB

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Artículos, Encontrados 2 registros

Artículos	Encontrados 2 registros

15 p, 1.3 MB

High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs / Hamilton, Dean P. (University of Warwick) ; Jennings, M. R. (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Russell, Stephen A. O. (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Fisher, C. A. (University of Warwick) ; Mawby, Philip A. (University of Warwick)
The temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. [...]
2017 - DOI (Digital Object Identifier)

10.1109/TPEL.2016.2636743
IEEE transactions on power electronics, Vol. 32, Issue 10 (October 2017) , p. 7967-7979

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5 p, 602.1 KB

3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature / Li, Fan (University of Warwick) ; Sharma, Yogesh (University of Warwick) ; Walker, David (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Jennings, Mike (University of Warwick) ; Martin, David (University of Warwick) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Mawby, Phil (University of Warwick)
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. [...]
2016 - DOI (Digital Object Identifier)

10.1109/LED.2016.2593771
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192

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