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1.
11 p, 9.3 MB Effects of lateral size, thickness, and stabilizer concentration on the cytotoxicity of defect-free graphene nanosheets : implications for biological applications / Hu, Chen-Xia (University of Manchester. Department of Chemistry) ; Read, Oliver (University of Manchester. Department of Chemistry) ; Shin, Yuyoung (University of Manchester. Department of Chemistry) ; Chen, Yingxian (University of Manchester. Nanomedicine Lab) ; Wang, Jingjing (University of Manchester. Department of Chemistry) ; Boyes, Matthew (University of Manchester. Department of Chemistry) ; Zeng, Niting (University of Manchester. Department of Chemistry) ; Panigrahi, Adyasha (University of Manchester. Department of Chemistry) ; Kostarelos, Kostas (Institut Català de Nanociència i Nanotecnologia) ; Larrosa, Igor (University of Manchester. Department of Chemistry) ; Vranic, Sandra (University of Manchester. Nanomedicine Lab) ; Casiraghi, Cinzia (University of Manchester. Department of Chemistry)
In this work, we apply liquid cascade centrifugation to highly concentrated graphene dispersions produced by liquid-phase exfoliation in water with an insoluble bis-pyrene stabilizer to obtain fractions containing nanosheets with different lateral size distributions. [...]
2022 - 10.1021/acsanm.2c02403
ACS applied nano materials, Vol. 5, issue 9 (Sep. 2022) , p. 12626-12636  
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2.
30 p, 3.6 MB Conductance quantization in resistive random access memory / Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. [...]
2015 - 10.1186/s11671-015-1118-6
Nanoscale Research Letters, Vol. 10 (December 2015) , art. 420  
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Vea también: autores con nombres similares
1 Hu, C.
1 Hu, Chen-Xia
1 Hu, Cheng
1 Hu, Chunling
1 Hu, Chunping
1 Hu, Chunping
1 Hu, Cinzia
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