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4 p, 232.3 KB Effects of high-field electrical stress on the conduction properties of ultra-thin La2O3 films / Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Molina, J. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Kim, Y. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Iwai, H. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; American Physical Society
Electron transport in high-field stressed metal-insulator-silicon devices with ultrathin (<5nm) lanthanum oxide layers is investigated. We show that the leakage current flowing through the structure prior to degradation is direct and Fowler-Nordheimtunneling conduction, while that after stress exhibits diode-like behavior with series and parallel resistances. [...]
2005 - 10.1063/1.1944890
Applied Physics Letters, Vol. 86, Issue 23 (June 2005) , p. 232104/1-232104/3  

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