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6 p, 1.3 MB Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs–AlxGa1−xAs / Estop i Graells, Eugènia (Centre national de la recherche scientifique (França). Laboratoire de Minéralogie Cristallographie) ; Izrael, A. (Centre national de la recherche scientifique (França). Laboratoire de Minéralogie Cristallographie) ; Sauvage, M. (Centre national de la recherche scientifique (França). Laboratoire de Minéralogie Cristallographie)
Heterojunctions GaAs-AlxGa1-xAs involved in the elaboration of IR laser diodes have been studied. The difference in lattice parameter between the GaAs substrate and the aluminum-substituted epitaxic layer AlxGa1-xAs has been measured accurately on a double-crystal spectrometer for a series of compositions. [...]
1976 - 10.1107/S0567739476001307
Acta crystallographica.Section A, Foundations of crystallography, Vol. 32, Issue. 4 (July 1976) , p. 627-632  

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