Results overview: Found 8 records in 0.02 seconds.
Articles, 8 records found
Articles 8 records found  
1.
34 p, 4.0 MB Gate electrostatics and quantum capacitance in ballistic graphene devices / Caridad, José M. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Shylau, Artsem A. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Gammelgaard, Lene (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Bøggild, Peter (Danmarks Tekniske Universitet. Center for Nanostructured Graphene)
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. [...]
2019 - 10.1103/PhysRevB.99.195408
Physical review B, Vol. 99, issue 19 (May 2019) , art. 195408  
2.
15 p, 790.9 KB Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures / Vincent, Tom (National Physical Laboratory (United Kingdom)) ; Panchal, Vishal (Bruker Nano Surfaces) ; Booth, Timothy J (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Antonov, Vladimir (University of London. Royal Holloway) ; Kazakova, Olga (National Physical Laboratory (United Kingdom))
We use confocal Raman microscopy and a recently proposed vector analysis scheme to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO). [...]
2019 - 10.1088/2053-1583/aaf1dc
2D Materials, Vol. 6, issue 1 (Jan. 2019) , art. 15022  
3.
6 p, 1.4 MB Ballistic tracks in graphene nanoribbons / Aprojanz, Johannes (Technische Universität Chemnitz. Institut für Physik) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Bampoulis, Pantelis (Leibniz Universität Hannover. Institut für Festkörperphysik) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Zandvliet, Harold J.W. (University of Twente. Physics of Interfaces and Nanomaterials) ; Zakharov, Alexei A. (Lund University. MAX IV Laboratory) ; Tegenkamp, C. (Institut für Festkörperphysik. Leibniz Universität Hannover)
High quality graphene nanoribbons epitaxially grown on the sidewalls of silicon carbide (SiC) mesa structures stand as key building blocks for graphene-based nanoelectronics. Such ribbons display 1D single-channel ballistic transport at room temperature with exceptionally long mean free paths. [...]
2018 - 10.1038/s41467-018-06940-5
Nature communications, Vol. 9 (October 2018) , art. 4426  
4.
6 p, 1.3 MB Conductance quantization suppression in the quantum Hall regime / Caridad, José M. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Lotz, Mikkel R. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Shylau, Artsem A. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Thomsen, Joachim D. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Gammelgaard, Lene (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Booth, Timothy J. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Bøggild, Peter (Danmarks Tekniske Universitet. Center for Nanostructured Graphene)
Conductance quantization is the quintessential feature of electronic transport in non-interacting mesoscopic systems. This phenomenon is observed in quasi one-dimensional conductors at zero magnetic field B, and the formation of edge states at finite magnetic fields results in wider conductance plateaus within the quantum Hall regime. [...]
2018 - 10.1038/s41467-018-03064-8
Nature communications, Vol. 9 (February 2018) , art. 659  
5.
9 p, 1.1 MB Quantum transport in graphene in presence of strain-induced pseudo-Landau levels / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Wereport on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. [...]
2016 - 10.1088/2053-1583/3/3/034005
2D Materials, Vol. 3, issue 3 (Jan. 2016) , art. 34005  
6.
14 p, 2.2 MB Electron trajectories and magnetotransport in nanopatterned graphene under commensurability conditions / Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Thomsen, Morten Rishøj (Aalborg Universitet. Department of Physics and Nanotechnology) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Pedersen, Thomas Garm (Aalborg Universitet. Department of Physics and Nanotechnology)
Commensurability oscillations in the magnetotransport of periodically patterned systems, emerging from the interplay of cyclotron orbit and pattern periodicity, are a benchmark of mesoscopic physics in electron gas systems. [...]
2017 - 10.1103/PhysRevB.96.075425
Physical review B, Vol. 96, issue 7 (Aug. 2017) , p. 75425  
7.
10 p, 3.6 MB Nanostructured graphene for spintronics / Gregersen, Søren Schou (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene)
Zigzag edges of the honeycomb structure of graphene exhibit magnetic polarization, making them attractive as building blocks for spintronic devices. Here, we show that devices with zigzag-edged triangular antidots perform essential spintronic functionalities, such as spatial spin splitting or spin filtering of unpolarized incoming currents. [...]
2017 - 10.1103/PhysRevB.95.121406
Physical review B, Vol. 95, issue 12 (March 2017) , art. 121406  
8.
4 p, 283.5 KB Scaling theory put into practice : first-principles modeling of transport in doped silicon nanowires / Markussen, Troels (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Rurali, Riccardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jauho, Antti-Pekka (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ; American Physical Society
We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the crossover from ballistic to diffusive transport in boron or phosphorus doped Si nanowires by computing the mean free path, sample-averaged conductance ⟨G⟩, and sample-to-sample variations std(G) as a function of energy, doping density, wire length, and the radial dopant profile. [...]
2007 - 10.1103/PhysRevLett.99.076803
Physical review letters, Vol. 99, Issue 7 (August 2007) , p. 76803  

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