Resultados globales: 7 registros encontrados en 0.01 segundos.
Artículos, Encontrados 7 registros
Artículos Encontrados 7 registros  
1.
6 p, 657.0 KB Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating / Russell, Stephen (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; McConville, Christopher F. (RMIT University. College of Science, Engineering and Health) ; Fisher, Craig (University of Warwick, School of Engineering) ; Hamilton, Dean P. (University of Warwick, School of Engineering) ; Mawby, Philip A. (University of Warwick, School of Engineering) ; Jennings, Michael R. (University of Warwick, School of Engineering)
A method to improve thermal management of \beta-GaO FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. [...]
2017 - 10.1109/JEDS.2017.2706321
IEEE Journal of the Electron Devices Society, Vol. 5, issue 4 (july 2017) , p. 256-261  
2.
19 p, 1.0 MB P-type β-gallium oxide : a new perspective for power and optoelectronic devices / Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Ton-That, C. (University of Technology Sydney) ; Huynh, Tung Thanh (University of Technology Sydney) ; Phillips, Matthew (University of Technology Sydney) ; Russell, Stephen A.O. (University of Warwick) ; Jennings, M.R. (University of Warwick) ; Berini, Bruno (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jomard, François (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS)
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . [...]
2017 - 10.1016/j.mtphys.2017.10.002
Materials today physics, Vol. 3 (December 2017) , p. 118-126  
3.
7 p, 2.6 MB A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability / Li, Fan (University of Warwick) ; Mawby, Philip A. (University of Warwick) ; Song, Qiu (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick) ; Sharma, Yogesh (Dynex Semiconductor Ltd.) ; Hamilton, Dean P. (De Montfort University) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Jennings, M.R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242  
4.
15 p, 1.1 MB Wide and ultra-wide bandgap oxides : where paradigm-shift photovoltaics meets transparent power electronics / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M.R. (University of Warwick) ; Russell, Stephen A.O. (University of Warwick) ; Teherani, Féréchteh Hosseini (Nanovation) ; Bove, Philippe (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Rogers, David J. (Nanovation)
Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. [...]
2018 - 10.1117/12.2302576
Proceedings of SPIE, Vol. 10533 (February 2018) , art. 105331Q  
5.
36 p, 830.9 KB Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M.R. (Swansea University) ; Russell, Stephen A. O. (University of Warwick) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Lira-Cantú, Monica (Institut Català de Nanociència i Nanotecnologia) ; Ton-That, C. (University of Technology Sydney) ; Teherani, Féréchteh Hosseini (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Bove, Philippe (Nanovation) ; Rogers, David J. (Nanovation)
The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-GaO) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley-Queisser limit for open-circuit voltage (V) under typical indoor light. [...]
2019 - 10.1016/j.mtener.2019.100350
Materials today energy, Vol. 14 (December 2019) , art. 100350  
6.
15 p, 1.3 MB High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs / Hamilton, Dean P. (University of Warwick) ; Jennings, M.R. (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Russell, Stephen A.O. (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Fisher, C.A. (University of Warwick) ; Mawby, Philip A. (University of Warwick)
The temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. [...]
2017 - 10.1109/TPEL.2016.2636743
IEEE transactions on power electronics, Vol. 32, Issue 10 (October 2017) , p. 7967-7979  
7.
21 p, 746.1 KB Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Fontserè Recuenco, Abel (ALBA Laboratori de Llum de Sincrotró) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Chen, H. (University of Warwick. School of Engineering) ; Gammon, P.M. (University of Warwick. School of Engineering) ; Jennings, M.R. (University of Warwick. School of Engineering) ; Thomas, M. (University of Warwick. School of Engineering) ; Fisher, C.A. (University of Warwick. School of Engineering) ; Sharma, Y.K. (University of Warwick. School of Engineering) ; Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ; Chmielowska, M. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Chenot, S. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Cordier, Y. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications)
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. [...]
2015 - 10.1088/0957-4484/26/11/115203
Nanotechnology, Vol. 26, Issue 11 (March 2015) , art. 115203  

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