Katagiri, Y. - Resultats de la cerca - Dipòsit Digital de Documents de la UAB

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Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam / Katagiri, Y. (Aoyama Gakuin University. Department of Electrical Engineering and Electronics) ; Nakamura, T. (University of Tokyo. Institute for Solid State Physics) ; Ishii, A. (Aoyama Gakuin University. Department of Chemistry and Biological Science) ; Ohata, C. (Aoyama Gakuin University. Department of Electrical Engineering and Electronics) ; Hasegawa, M. (Aoyama Gakuin University. Department of Chemistry and Biological Science) ; Katsumoto, Shingo (University of Tokyo. Institute for Solid State Physics) ; Cusati, T. (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Fortunelli, A. (Istituto di Chimica dei Composti Organometallici (Pisa, Itàlia)) ; Iannaccone, G. (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Fiori, G. (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Haruyama, Junji (Aoyama Gakuin University. Department of Electrical Engineering and Electronics)
Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. [...]
2016 - DOI (Digital Object Identifier)

10.1021/acs.nanolett.6b01186
Nano letters, Vol. 16, issue 6 (June 2016) , p. 3788-3794

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