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Resultats globals: 2 registres trobats en 0.02 segons.
Articles, 2 registres trobats
Articles 2 registres trobats  
1.
12 p, 7.5 MB Enhancement of proximity-induced superconductivity in a planar Ge hole gas / Aggarwal, Kushagra (Institute of Science and Technology Austria) ; Hofmann, Andrea (Institute of Science and Technology Austria) ; Jirovec, D (Institute of Science and Technology Austria) ; Prieto, Ivan (Institute of Science and Technology Austria) ; Sammak, Amir (QuTech and Netherlands Organisation for Applied Scientific Research) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Veldhorst, Menno (QuTech and Kavli Institute of Nanoscience) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Scappucci, Giordano (QuTech and Kavli Institute of Nanoscience) ; Danon, Jeroen (Norwegian University of Science and Technology. Department of Physics) ; Katsaros, Georgios (Institute of Science and Technology Austria)
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. [...]
2021 - 10.1103/PhysRevResearch.3.L022005
Physical Review Research, Vol. 3, issue 2 (April-June 2021) , art. L022005  
Registre complet - Creative Commons
2.
8 p, 743.4 KB Ptsi clustering in silicon probed by transport spectroscopy / Mongillo, Massimo (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Spathis, Panayotis (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Katsaros, Georgios (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; De Franceschi, Silvano (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Gentile, Pascal (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. [...]
2014 - 10.1103/PhysRevX.3.041025
Physical Review, Vol. 3, issue. 4 (Dec. 2014) , art. e041025  
Registre complet - Creative Commons

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