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15 p, 790.9 KB Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures / Vincent, Tom (National Physical Laboratory (United Kingdom)) ; Panchal, Vishal (Bruker Nano Surfaces) ; Booth, Timothy J (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Antonov, Vladimir (University of London. Royal Holloway) ; Kazakova, Olga (National Physical Laboratory (United Kingdom))
We use confocal Raman microscopy and a recently proposed vector analysis scheme to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO). [...]
2019 - 10.1088/2053-1583/aaf1dc
2D Materials, Vol. 6, issue 1 (Jan. 2019) , art. 15022  

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