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Resultats globals: 2 registres trobats en 0.03 segons.
Articles, 2 registres trobats
Articles 2 registres trobats  
1.
32 p, 2.7 MB Ultralow-dielectric-constant amorphous boron nitride / Hong, Seokmo (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Lee, Chang-Seok (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ; Lee, Min-Hyun (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ; Lee, Yeongdong (Ulsan National Institute of Science and Technology. School of Materials Science and Engineering) ; Ma, Kyung Yeol (Ulsan National Institute of Science and Technology. Department of Energy Engineering) ; Kim, Gwangwoo (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Yoon, Seong In (Ulsan National Institute of Science and Technology. Department of Energy Engineering) ; Ihm, Kyuwook Ihm (Pohang Accelerator Laboratory) ; Kim, Ki-Jeong (Pohang Accelerator Laboratory) ; Shin, Tae Joo (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Kim, Sang Won (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ; Jeon, Eun-chae (University of Ulsan. School of Materials Science and Engineering) ; Jeon, Hansol (Ulsan National Institute of Science and Technology. School of Materials Science and Engineering) ; Kim, Ju-Young (Ulsan National Institute of Science and TechnologY. School of Materials Science and Engineering) ; Lee, Hyung-Ik (Samsung Advanced Institute of Technology. Analytical Engineering Group) ; Lee, Zonghoon (Center for Multidimensional Carbon Materials (Ulsan, Corea del Nord)) ; Antidormi, Aleandro (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Chhowalla, Manish (University of Cambridge. Department of Materials Science & Metallurgy) ; Shin, Hyeon-Jin (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ; Shin, Hyeon Suk (Ulsan National Institute of Science and Technology. Low-Dimensional Carbon Materials Center)
Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. [...]
2020 - 10.1038/s41586-020-2375-9
Nature, Vol. 582, issue 7813 (June 2020) , p. 511-514  
Registre complet -
2.
6 p, 3.4 MB Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN / Kim, Gwangwoo (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Ma, Kyung Yeol (Ulsan National Institute of Science and Technology. Department of Energy Engineering) ; Park, Minsu (Korea Advanced Institute of Science and Technology. Department of Materials Science and Engineering) ; Kim, Minsu (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Jeon, Jonghyuk (Seoul National University. Department of Chemistry) ; Song, Jinouk (Korea Advanced Institute of Science and Technology. School of Electrical Engineering) ; Barrios Vargas, José Eduardo (Universidad Nacional Autónoma de México. Departamento de Física y Química Teórica) ; Sato, Yuta (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute) ; Lin, Yung-Chang (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute) ; Suenaga, Kazu (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Yoo, Seunghyup (Korea Advanced Institute of Science and Technology. School of Electrical Engineering) ; Sohn, Byeong-Hyeok (Seoul National University. Department of Chemistry) ; Jeon, Seokwoo (Korea Advanced Institute of Science and Technology. Department of Materials Science and Engineering) ; Shin, Hyeon Suk (Ulsan National Institute of Science and Technology. Low Dimensional Carbon Material Center)
Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. [...]
2020 - 10.1038/s41467-020-19181-2
Nature communications, Vol. 11 (2020) , art. 5359  
Registre complet - Creative Commons

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1 Kim, G.
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