Resultats globals: 5 registres trobats en 0.03 segons.
Articles, 5 registres trobats
Articles 5 registres trobats  
1.
29 p, 1.7 MB Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces : band alignment and magnetic structure / Liu, Yu (Microsoft Quantum Materials Lab Copenhagen) ; Luchini, Alessandra (Niels Bohr Institute) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Koch, Christian (Institut Català de Nanociència i Nanotecnologia) ; Schuwalow, Sergej (Niels Bohr Institute) ; Khan, Sabbir A. (Niels Bohr Institute) ; Stankevič, Tomas (Microsoft Quantum Materials Lab Copenhagen) ; Francoual, Sonia (Deutsches Elektronen-Synchrotron Desy) ; Mardegan, Jose R.L. (Deutsches Elektronen-Synchrotron Desy) ; Krieger, Jonas A. (Paul Scherrer Institut (Suïssa)) ; Strocov, Vladimir N. (Paul Scherrer Institut (Suïssa)) ; Stahn, Jochen (Paul Scherrer Institut (Suïssa)) ; Vaz, Carlos A.F. (Paul Scherrer Institut (Suïssa)) ; Ramakrishnan, Mahesh (Paul Scherrer Institut (Suïssa)) ; Staub, Urs (Paul Scherrer Institut (Suïssa)) ; Lefmann, Kim (Niels Bohr Institute) ; Aeppli, Gabriel (Paul Scherrer Institut (Suïssa)) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (Niels Bohr Institute)
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. [...]
2020 - 10.1021/acsami.9b15034
ACS applied materials & interfaces, Vol. 12, issue 7 (Feb. 2020) , p. 8780-8787  
2.
30 p, 3.1 MB Semiconductor-ferromagnetic insulator-superconductor nanowires : stray field and exchange field / Liu, Yu (University of Copenhagen. Center for Quantum Devices) ; Vaitiekėnas, Saulius (University of Copenhagen. Niels Bohr Institute) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Koch, Christian (Institut Català de Nanociència i Nanotecnologia) ; Hart, Sean (Stanford University. Department of Physics) ; Cui, Zheng (Stanford University. Department of Applied Physics) ; Kanne, Thomas (University of Copenhagen. Niels Bohr Institute) ; Khan, Sabbir A. (University of Copenhagen. Niels Bohr Institute) ; Tanta, Rawa (University of Copenhagen. Niels Bohr Institute) ; Upadhyay, Shivendra (University of Copenhagen. Niels Bohr Institute) ; Cachaza, Martin Espiñeira (University of Copenhagen. Niels Bohr Institute) ; Marcus, Charles M. (University of Copenhagen. Niels Bohr Institute) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Moler, Kathryn A. (Stanford University. Department of Applied Physics) ; Krogstrup, Peter (University of Copenhagen. Niels Bohr Institute)
Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for the design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of freestanding vapor-liquid-solid grown and in-plane selective area grown semiconductor-ferromagnetic insulator-superconductor (InAs/EuS/Al) nanowire heterostructures. [...]
2020 - 10.1021/acs.nanolett.9b04187
Nano letters, Vol. 20, issue 1 (Jan. 2020) , p. 456-462  
3.
11 p, 2.8 MB Field effect enhancement in buffered quantum nanowire networks / Krizek, Filip (Center for Quantum Devices and Station Q Copenhagen) ; Sestoft, Joachim E. (Center for Quantum Devices and Station Q Copenhagen) ; Aseev, Pavel (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Vaitiekenas, Saulius (Center for Quantum Devices and Station Q Copenhagen) ; Casparis, Lucas (Center for Quantum Devices and Station Q Copenhagen) ; Khan, Sabbir A. (Center for Quantum Devices and Station Q Copenhagen) ; Liu, Yu (Center for Quantum Devices and Station Q Copenhagen) ; Stankevič, Tomas (Center for Quantum Devices and Station Q Copenhagen) ; Whiticar, A.M. (Center for Quantum Devices and Station Q Copenhagen) ; Fursina, Alexandra (Delft University of Technology) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Koops, René (QuTech and Netherlands Organization for Applied Scientific Research) ; Uccelli, Emanuele (QuTech and Netherlands Organization for Applied Scientific Research) ; Kouwenhoven, Leo P. (Delft University of Technology) ; Marcus, Charles M. (Center for Quantum Devices and Station Q Copenhagen) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (Center for Quantum Devices and Station Q Copenhagen)
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. [...]
2018 - 10.1103/PhysRevMaterials.2.093401
Physical review materials, Vol. 2, Issue 9 (September 2018) , art. 93401  
4.
8 p, 627.7 KB Selective-Area-Grown Semiconductor-Superconductor Hybrids : A Basis for Topological Networks / Vaitiekenas, Saulius (University of Copenhagen) ; Whiticar, A.M. (University of Copenhagen) ; Deng, M.T. (University of Copenhagen) ; Krizek, Filip (University of Copenhagen) ; Sestoft, Joachim E. (University of Copenhagen) ; Palmstrøm, C.J. (University of California. Materials Department) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (University of Copenhagen) ; Casparis, Lucas (University of Copenhagen) ; Marcus, Charles M. (University of Copenhagen)
We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. [...]
2018 - 10.1103/PhysRevLett.121.147701
Physical review letters, Vol. 121, Issue 14 (October 2018) , art. 147701  
5.
10 p, 8.1 MB Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks / Aseev, Pavel (Delft University of Technology) ; Fursina, Alexandra (Delft University of Technology) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Krizek, Filip (University of Copenhagen) ; Sestoft, Joachim E. (University of Copenhagen) ; Borsoi, Francesco (Delft University of Technology) ; Heedt, Sebastian (Delft University of Technology) ; Wang, Guanzhong (Delft University of Technology) ; Binci, Luca (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Swoboda, Timm (Institut Català de Nanociència i Nanotecnologia) ; Koops, René (QuTech and Netherlands Organization for Applied Scientific Research) ; Uccelli, Emanuele (QuTech and Netherlands Organization for Applied Scientific Research) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (University of Copenhagen) ; Kouwenhoven, Leo P. (Delft University of Technology) ; Caroff, Philippe (Delft University of Technology)
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. [...]
2019 - 10.1021/acs.nanolett.8b03733
Nano letters, Vol. 19, Issue 1 (January 2019) , p. 218-227  

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