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32 p, 3.3 MB Twin-induced InSb nanosails : a convenient high mobility quantum system / De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Leturcq, Renaud (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França)) ; Plissard, Sébastien R. (Centre national de la recherche scientifique. Laboratoire d'analyse et d'architecture des systèmes) ; Rolland, Chloé (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França)) ; Magen Dominguez, Cesar (Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Caroff, Philippe (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. [...]
2016 - 10.1021/acs.nanolett.5b05125
Nano letters, Vol. 16, issue 2 (Oct. 2016) , p. 825-833  

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