Results overview: Found 3 records in 0.02 seconds.
Articles, 3 records found
Articles 3 records found  
1.
6 p, 1.1 MB Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device / Zhang, Meiyun (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Long, Shibing (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Li, Yang (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Liu, Qi (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Lv, Hangbing (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Institute of Microelectronics of Chinese Academy of Sciences (Beijing))
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). [...]
2016 - 10.1186/s11671-016-1484-8
Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269  
2.
30 p, 3.6 MB Conductance quantization in resistive random access memory / Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Suñé, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. [...]
2015 - 10.1186/s11671-015-1118-6
Nanoscale Research Letters, Vol. 10 (December 2015) , art. 420  
3.
7 p, 1.2 MB designGG : an R-package and web tool for the optimal design of genetical genomics experiments / Li, Yang (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos)) ; Swertz, Morris A. (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos)) ; Vera Rodríguez, Gonzalo (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos)) ; Fu, Jingyuan (University of Groningen. Department of Genetics (Groningen, Països Baixos)) ; Breitling, Rainer (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos)) ; Jansen, Ritsert C. (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos))
Background: High-dimensional biomolecular profiling of genetically different individuals in one or more environmental conditions is an increasingly popular strategy for exploring the functioning of complex biological systems. [...]
2009 - 10.1186/1471-2105-10-188
BMC Bioinformatics, Vol. 10, N. 188 (June 2009) , p. 1-7  

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