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8 p, 2.1 MB Long-lived excitons in GaN/AlN nanowire heterostructures / Beeler, Mark (Commissariat à l'énergie atomique et aux énergies alternatives (França)) ; Lim, Caroline B. (Commissariat à l'énergie atomique et aux énergies alternatives (França)) ; Hille, Pascal (Justus Liebig-Universität Gießen. Physikalisches Institut) ; Bleuse, Joel (Commissariat à l'énergie atomique et aux énergies alternatives (França)) ; Schörmann, Jörg (I. Physikalisches Institut, Justus-Liebig-Universität Gießen) ; De La Mata, Maria (Institut de Ciència dels Materials de Barcelona) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (I. Physikalisches Institut, Justus-Liebig-Universität Gießen) ; Monroy, Eva (Commissariat à l'énergie atomique et aux énergies alternatives (França))
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. [...]
2015 - 10.1103/PhysRevB.91.205440
Physical Review B, Vol. 91, issue 20 (May 2015) , art. 205440  

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