Results overview: Found 4 records in 0.03 seconds.
Articles, 4 records found
Articles 4 records found  
1.
6 p, 1.1 MB Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device / Zhang, Meiyun (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). [...]
2016 - 10.1186/s11671-016-1484-8
Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269  
2.
30 p, 3.6 MB Conductance quantization in resistive random access memory / Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. [...]
2015 - 10.1186/s11671-015-1118-6
Nanoscale Research Letters, Vol. 10 (December 2015) , art. 420  
3.
8 p, 1.2 MB Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM / Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Perniola, Luca (Laboratoire d'électronique des technologies de l'information. MINATEC) ; Cagli, Carlo (Laboratoire d'électronique des technologies de l'information. MINATEC) ; Buckley, Julien (Laboratoire d'électronique des technologies de l'information. MINATEC) ; Lian, Xiaojuan (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pan, Feng (Tsinghua University. Laboratory of Advanced Materials) ; Liu, Ming (Chinese Academy of Sciences. Lab of Nanofabrication and Novel Device Integration) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). [...]
2013 - 10.1038/srep02929
Scientific Reports, Vol. 3, (October 2013) , art. 2929  
4.
5 p, 1.1 MB Quantum size effects in hafnium-oxide resistive switching / Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lian, Xiaojuan (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cagli, Carlo (CEA-LETI (Grenoble, França)) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Perniola, Luca (CEA-LETI (Grenoble, França)) ; Liu, Ming (Chinese Academy of Sciences. Laboratory of Nanofabrication and Novel Device Integration (Beijing, Xina)) ; American Physical Society
Discrete changes of conductance of the order of G0 = 2e2/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. [...]
2013 - 10.1063/1.4802265
Applied Physics Letters, Vol. 102, Issue 18 (May 2013) , p. 183505/1-183505/4  

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