Results overview: Found 2 records in 0.02 seconds.
Articles, 2 records found
Articles 2 records found  
1.
23 p, 2.2 MB Nanomechanics of flexoelectric switching / Očenášek, Jan (University of West Bohemia in Pilsen) ; Lu, Haidong (University of Nebraska-Lincoln. Department of Physics and Astronomy) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Eom, C.B. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Alcalá, Jorge (Universitat Politècnica de Catalunya. Departament de Ciència dels Materials i Enginyeria Metal·lúrgica) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Gruverman, A. (University of Nebraska-Lincoln. Department of Physics and Astronomy)
We examine the phenomenon of flexoelectric switching of polarization in ultrathin films of barium titanate induced by a tip of an atomic force microscope (AFM). The spatial distribution of the tip-induced flexoelectricity is computationally modeled both for perpendicular mechanical load (point measurements) and for sliding load (scanning measurements), and compared with experiments. [...]
2015 - 10.1103/PhysRevB.92.035417
Physical Review B, Vol. 92, Issue 3 (July 2015) , art. 035417  
2.
9 p, 1.8 MB On the persistence of polar domains in ultrathin ferroelectric capacitors / Zubko, Pavlo (University College London) ; Lu, Haidong (University of Nebraska-Lincoln) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Martí Rovirosa, Xavier (Academy of Sciences of the Czech Republic) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia) ; Eom, C.B. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Gruverman, A. (University of Nebraska-Lincoln. Department of Physics and Astronomy)
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. [...]
2017 - 10.1088/1361-648X/aa73c3
Journal of Physics Condensed Matter, Vol. 29, Núm. 28 (July 2017) , art. 284001  

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