Results overview: Found 13 records in 0.02 seconds.
Articles, 13 records found
Articles 13 records found  1 - 10next  jump to record:
1.
20 p, 898.1 KB Giant reversible nanoscale piezoresistance at room temperature in Sr₂IrO₄ thin films / Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia) ; López Mir, Laura (Institut Català de Nanociència i Nanotecnologia) ; Paradinas Aranjuelo, Marcos (Institut de Ciència de Materials de Barcelona) ; Holy, Vaclav (Charles University. Department of Condensed Matter Physics) ; Železný, Jakuv (Institute of Physics ASCR) ; Yi, Di (University of California. Department of Materials Science and Engineering) ; Suresha, Siriyara J. (Lawrence Berkeley National Laboratory. Materials Sciences Division) ; Liu, Jian (University of California. Department of Physics) ; Rayan Serrao, Claudy (University of California. Department of Materials Science and Engineering) ; Ramesh, Ramamoorthy (University of California. Department of Physics) ; Ocal García, Carmen (Institut de Ciència de Materials de Barcelona) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Layered iridates have been the subject of intense scrutiny on account of their unusually strong spin-orbit coupling, which opens up a narrow bandgap in a material that would otherwise be a metal. This insulating state is very sensitive to external perturbations. [...]
2015 - 10.1039/c4nr06954d
Nanoscale, Vol. 7, Issue 8 (February 2015) , p. 3453-3459  
2.
7 p, 853.2 KB Four-state ferroelectric spin-valve / Quindeau, Andy (Max Planck Institute of Microstructure Physics) ; Fina, Ignasi (University of Warwick. Department of Physics) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Apachitei, Geanina (University of Warwick. Department of Physics) ; Ferrer, Pilar (Harwell Science and Innovation Campus. Diamond Light Source) ; Nicklin, Chris (Harwell Science and Innovation Campus. Diamond Light Source) ; Pippel, Eckhard (Max Planck Institute of Microstructure Physics) ; Hesse, Dietrich (Max Planck Institute of Microstructure Physics) ; Alexe, Marin (University of Warwick. Department of Physics)
Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. [...]
2015 - 10.1038/srep09749
Scientific reports, Vol. 5 (May 2015) , art. 9749  
3.
9 p, 1.8 MB On the persistence of polar domains in ultrathin ferroelectric capacitors / Zubko, Pavlo (University College London) ; Lu, Haidong (University of Nebraska-Lincoln) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Martí Rovirosa, Xavier (Academy of Sciences of the Czech Republic) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia) ; Eom, C.B. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Gruverman, A. (University of Nebraska-Lincoln. Department of Physics and Astronomy)
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. [...]
2017 - 10.1088/1361-648X/aa73c3
Journal of Physics Condensed Matter, Vol. 29, Núm. 28 (July 2017) , art. 284001  
4.
12 p, 8.4 MB Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region / Saidl, V. (Univerzita Karlova (Praga, República Txeca)) ; Brajer, M. (Univerzita Karlova (Praga, República Txeca)) ; Horák, L. (Univerzita Karlova (Praga, República Txeca)) ; Reichlová, H. (Akademie věd České republiky) ; Výborný, K. (Akademie věd České republiky) ; Veis, M. (Univerzita Karlova (Praga, República Txeca)) ; Janda, T. (Univerzita Karlova (Praga, República Txeca)) ; Trojánek, F. (Univerzita Karlova (Praga, República Txeca)) ; Maryško, M. (Akademie věd České republiky) ; Fina Martínez, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Jungwirth, T. (The University of Nottingham) ; Němec, P. (Univerzita Karlova (Praga, República Txeca))
Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near-infrared spectral ranges. [...]
2016 - 10.1088/1367-2630/18/8/083017
New journal of physics, Vol. 18 (August 2016) , art. 083017  
5.
7 p, 721.1 KB In-plane tunnelling field-effect transistor integrated on Silicon / Fina Martínez, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Apachitei, Geanina (University of Warwick. Department of Physics) ; Preziosi, Daniele (Max Planck Institute of Microstructure Physics) ; Deniz, Hakan (Max Planck Institute of Microstructure Physics) ; Kriegner, Dominik (Charles University. Department of Condensed Matter Physics) ; Martí Rovirosa, Xavier (Institute of Physics) ; Alexe, Marin (University of Warwick. Department of Physics)
Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. [...]
2015 - 10.1038/srep14367
Scientific reports, Vol. 5 (September 2015) , art. 14367  
6.
8 p, 695.2 KB Prospect for antiferromagnetic spintronics / Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Fina Martínez, Ignasi (University of Warwick. Department of Physics) ; Jungwirth, Tomas (Fyzikální ústav AV ČR)
Exploiting both spin and charge of the electron in electronic micordevices has lead to a tremendous progress in both basic condensed-matter research and microelectronic applications, resulting in the modern field of spintronics. [...]
2015 - 10.1109/TMAG.2014.2358939
IEEE transactions on magnetics, Vol. 51, issue 4 (April 2015) , art. 7109970  
7.
21 p, 2.1 MB Electric-field adjustable time-dependent magnetoelectric response in martensitic FeRh alloy / Fina Martínez, Ignasi (Institut de Ciència de Materials de Barcelona) ; Quintana, A. (Universitat Autònoma de Barcelona. Departament de Física) ; Padilla Pantoja, Jessica (Institut Català de Nanociència i Nanotecnologia) ; Martí Rovirosa, Xavier (Fyzikální ústav AV ČR) ; Macià Bros, Ferran (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ; Aballe, Lucia (ALBA Laboratori de Llum de Sincrotró) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Steady or dynamic magnetoelectric response, selectable and adjustable by only varying the amplitude of the applied electric field, is found in a multiferroic FeRh/PMN-PT device. In-operando time-dependent structural, ferroelectric, and magnetoelectric characterizations provide evidence that, as in magnetic shape memory martensitic alloys, the observed distinctive magnetoelectric responses are related to the time-dependent relative abundance of antiferromagnetic–ferromagnetic phases in FeRh, unbalanced by voltage-controlled strain. [...]
2017 - 10.1021/acsami.7b00476
ACS applied materials & interfaces, Vol. 9, issue 18 (May 2017) , p.15577−15582  
8.
4 p, 539.9 KB Exchange biasing and electric polarization with YMnO3 / Martí Rovirosa, Xavier (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Hrabovsky, D. (Institut de Ciència de Materials de Barcelona) ; Fábrega Sánchez, Lourdes (Institut de Ciència de Materials de Barcelona) ; Ruyter, A. (Institut de Ciència de Materials de Barcelona) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; Laukhin, V. (Institut de Ciència de Materials de Barcelona) ; Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física) ; García Cuenca, M. V. (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Ferrater Martorell, Cèsar (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Varela Fernández, Manuel, 1956- (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Vilà, A. (Universitat de Barcelona. Departament d'Electrònica) ; Lüders, Ulrike Anne (LNMH ONERA-CNRS (Toulouse, França)) ; Bobo, Jean-François (LNMH ONERA-CNRS (Toulouse, França)) ; American Physical Society
We report on the growth and functional characterizations of epitaxialthin films of the multiferroic YMnO3. We show that using Pt as a seed layer on SrTiO3(111) substrates, epitaxialYMnO3films (0001) textured are obtained. [...]
2006 - 10.1063/1.2234285
Applied physics letters, Vol. 89, Issue 3 (July 2006) , p. 032510/1-032510/3  
9.
4 p, 484.5 KB Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films / Martí Rovirosa, Xavier (Institut de Ciència de Materials de Barcelona) ; Fina Martínez, Ignasi (Institut de Ciència de Materials de Barcelona) ; Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física) ; Ferrater Martorell, Cèsar (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Varela Fernández, Manuel, 1956- (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Fábrega Sánchez, Lourdes (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona)
Orthorhombic YMnO3epitaxialthin films were grown on Nb(0. 5%)-doped SrTiO3(001) substrates. Film's thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more distorted. [...]
2009 - 10.1063/1.3238287
Applied physics letters, Vol. 95, Issue 14 (October 2009) , p. 142903/1-142903/3  
10.
4 p, 865.5 KB Electric-field control of exchange bias in multiferroic epitaxial heterostructures / Laukhin, V. (Institut de Ciència de Materials de Barcelona) ; Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física) ; Martí Rovirosa, Xavier (Institut de Ciència de Materials de Barcelona) ; Hrabovsky, D. (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; García Cuenca, M. V. (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Ferrater Martorell, Cèsar (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Varela Fernández, Manuel, 1956- (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Lüders, Ulrike Anne (LNMH ONERA-CNRS (Toulouse, França)) ; Bobo, Jean-François (LNMH ONERA-CNRS (Toulouse, França)) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; American Physical Society
The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. [...]
2006 - 10.1103/PhysRevLett.97.227201
Physical review letters, Vol. 97, Issue 22 (November 2006) , p. 227201  

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