Resultats globals: 29 registres trobats en 0.01 segons.
Articles, 29 registres trobats
Articles 29 registres trobats  1 - 10següentfinal  anar al registre:
1.
8 p, 1.5 MB 3D ordering at the liquid-solid polar interface of nanowires / Zamani, Mahdi (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Imbalzano, Giulio (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ; Tappy, Nicolas (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Alexander, Duncan T.L. (École Polytechnique Fédérale de Lausanne. Institute of Physics) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Ramasse, Quentin M. (University of Leeds. School of Physics and Astronomy) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Bienvenue, Sebastien (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ; Hébert, Cécile (École Polytechnique Fédérale de Lausanne. Institute of Physics) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Ceriotti, Michele (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials)
The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic thermodynamics, neglecting the atomistic nature of the liquid-solid interface. [...]
2020 - 10.1002/adma.202001030
Advanced materials, Vol. 32, issue 38 (Sep. 2020) , art. 2001030  
2.
29 p, 1.7 MB Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces : band alignment and magnetic structure / Liu, Yu (Microsoft Quantum Materials Lab Copenhagen) ; Luchini, Alessandra (Niels Bohr Institute) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Koch, Christian (Institut Català de Nanociència i Nanotecnologia) ; Schuwalow, Sergej (Niels Bohr Institute) ; Khan, Sabbir A. (Niels Bohr Institute) ; Stankevič, Tomas (Microsoft Quantum Materials Lab Copenhagen) ; Francoual, Sonia (Deutsches Elektronen-Synchrotron Desy) ; Mardegan, Jose R.L. (Deutsches Elektronen-Synchrotron Desy) ; Krieger, Jonas A. (Paul Scherrer Institut (Suïssa)) ; Strocov, Vladimir N. (Paul Scherrer Institut (Suïssa)) ; Stahn, Jochen (Paul Scherrer Institut (Suïssa)) ; Vaz, Carlos A.F. (Paul Scherrer Institut (Suïssa)) ; Ramakrishnan, Mahesh (Paul Scherrer Institut (Suïssa)) ; Staub, Urs (Paul Scherrer Institut (Suïssa)) ; Lefmann, Kim (Niels Bohr Institute) ; Aeppli, Gabriel (Paul Scherrer Institut (Suïssa)) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (Niels Bohr Institute)
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. [...]
2020 - 10.1021/acsami.9b15034
ACS applied materials & interfaces, Vol. 12, issue 7 (Feb. 2020) , p. 8780-8787  
3.
30 p, 3.1 MB Semiconductor-ferromagnetic insulator-superconductor nanowires : stray field and exchange field / Liu, Yu (University of Copenhagen. Center for Quantum Devices) ; Vaitiekėnas, Saulius (University of Copenhagen. Niels Bohr Institute) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Koch, Christian (Institut Català de Nanociència i Nanotecnologia) ; Hart, Sean (Stanford University. Department of Physics) ; Cui, Zheng (Stanford University. Department of Applied Physics) ; Kanne, Thomas (University of Copenhagen. Niels Bohr Institute) ; Khan, Sabbir A. (University of Copenhagen. Niels Bohr Institute) ; Tanta, Rawa (University of Copenhagen. Niels Bohr Institute) ; Upadhyay, Shivendra (University of Copenhagen. Niels Bohr Institute) ; Cachaza, Martin Espiñeira (University of Copenhagen. Niels Bohr Institute) ; Marcus, Charles M. (University of Copenhagen. Niels Bohr Institute) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Moler, Kathryn A. (Stanford University. Department of Applied Physics) ; Krogstrup, Peter (University of Copenhagen. Niels Bohr Institute)
Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for the design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of freestanding vapor-liquid-solid grown and in-plane selective area grown semiconductor-ferromagnetic insulator-superconductor (InAs/EuS/Al) nanowire heterostructures. [...]
2020 - 10.1021/acs.nanolett.9b04187
Nano letters, Vol. 20, issue 1 (Jan. 2020) , p. 456-462  
4.
10 p, 3.8 MB GaAs nanoscale membranes : prospects for seamless integration of III-Vs on silicon / Raya, Andrés M. (Instituto de Micro y Nanotecnología) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Dubrovskii, Vladimir G. (ITMO University) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Alén, Benito (Instituto de Micro y Nanotecnología) ; Morgan, Nicholas (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Ramasse, Quentin M. (University of Leeds. School of Physics) ; Fuster, David (Instituto de Micro y Nanotecnología) ; Llorens, José M. (Instituto de Micro y Nanotecnología) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Institute of Physics)
The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. [...]
2020 - 10.1039/c9nr08453c
Nanoscale, Vol. 12, issue 2 (2020) , p. 815-824  
5.
12 p, 8.1 MB Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction / He, Yongmin (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Tang, PengYi (Institut Català de Nanociència i Nanotecnologia) ; Hu, Zhili (Rice University. Department of Materials Science and NanoEngineering (USA)) ; He, Qiyuan (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Zhu, Chao (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Wang, Luqing (Rice University. Department of Materials Science and NanoEngineering (USA)) ; Zeng, Qingsheng (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Golani, Prafful (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Gao, Guanhui (Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund (Germany)) ; Fu, Wei (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Huang, Zhiqi (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Gao, Caitian (Nanyang Technological University. Centre for Micro-/Nano-electronics (Singapore)) ; Xia, Juan (University of Electronic Science and Technology of China. Institute of Fundamental and Frontier Sciences (China)) ; Wang, Xingli (Nanyang Technological University. CNRS-International-NTU-THALES Research Alliance (Singapore)) ; Wang, Xuewen (Northwestern Polytechnical University. Institute of Flexible Electronics (China)) ; Zhu, Chao (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; Ramasse, Quentin M. (University of Leeds. School of Chemical and Process Engineering (UK)) ; Zhang, Ao (Nanyang Technological University. School of Materials Science and Engineering (Singapore)) ; An, Boxing (Beijing University of Technology. College of Materials Science and Engineering (China)) ; Zhang, Yongzhe (Beijing University of Technology. College of Materials Science and Engineering (China) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Morante, Joan Ramon (Institut de Recerca en Energia de Catalunya) ; Wang, Liang (Shanghai University. School of Environmental and Chemical Engineering (China)) ; Tay, Beng Kang (Nanyang Technological University. CNRS-International-NTU-THALES Research Alliance (Singapore)) ; Yakobson, Boris I. (Rice University. Department of Materials Science and NanoEngineering (USA)) ; Trampert, Achim (Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin Hausvogteiplatz (Germany)) ; Zhang, Hua (City University of Hong Kong. Department of Chemistry (China)) ; Wu, Minghong (Shanghai University. School of Environmental and Chemical Engineering (China)) ; Wang, Qi Jie (Nanyang Technological University. Center for OptoElectronics and Biophotonics (Singapore)) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Liu, Zheng (Environmental Chemistry and Materials Centre. Nanyang Environment and Water Research Institute (Singapore))
Atom-thin transition metal dichalcogenides (TMDs) have emerged as fascinating materials and key structures for electrocatalysis. So far, their edges, dopant heteroatoms and defects have been intensively explored as active sites for the hydrogen evolution reaction (HER) to split water. [...]
2020 - 10.1038/s41467-019-13631-2
Nature communications, Vol. 11 (January 2020) , art. 57  
6.
45 p, 1.3 MB Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth / Aseev, Pavel (Microsoft Quantum Lab Delft) ; Wang, Guanzhong (Delft University of Technology) ; Binci, Luca (Delft University of Technology) ; Singh, Amrita (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Stek, Lieuwe J. (Delft University of Technology) ; Bordin, Alberto (Delft University of Technology) ; Watson, John D. (Microsoft Quantum Lab Delft) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Abel, Daniel (Microsoft Quantum Lab Delft) ; Gamble, John (Microsoft Quantum) ; Van Hoogdalem, Kevin (Microsoft Quantum Lab Delft) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Kouwenhoven, Leo P. (Delft University of Technology) ; De Lange, Gijs (Microsoft Quantum Lab Delft) ; Caroff, Philippe (Microsoft Quantum Lab Delft)
Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. [...]
2019 - 10.1021/acs.nanolett.9b04265
Nano letters, Vol. 19, Issue 12 (December 2019) , p. 9102-9111  
7.
9 p, 1.2 MB Segregation scheme of indium in AlGaInAs nanowire shells / Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Di Russo, Enrico (Université de Rouen) ; Escobar Steinvall, Simon (École Polytechnique Fédérale de Lausanne) ; Segura Ruiz, Jaime (European Synchrotron Radiation Facility) ; Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Rigutti, Lorenzo (Université de Rouen) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Quaternary alloys enable the independent optimization of different semiconductor properties, such as the separate tuning of the band gap and the lattice constant. Nanowire core-shell structures should allow a larger range of compositional tuning as strain can be accommodated in a more effective manner than in thin films. [...]
2019 - 10.1103/PhysRevMaterials.3.023001
Physical review materials, Vol. 3, Issue 2 (February 2019) , art. 23001  
8.
19 p, 5.8 MB Role of Boron and Phosphorus in Enhanced Electrocatalytic Oxygen Evolution by Nickel Borides and Nickel Phosphides / Masa, Justus (Ruhr-Universität Bochum. Center for Electrochemical Sciences) ; Andronescu, Corina (Ruhr-Universität Bochum. Center for Electrochemical Sciences) ; Antoni, Hendrik (Ruhr-Universität Bochum) ; Sinev, Ilya (Ruhr-Universität Bochum. Department of Physics) ; Seisel, Sabine (Ruhr-Universität Bochum. Center for Electrochemical Sciences) ; Elumeeva, Karina (Ruhr-Universität Bochum. Center for Electrochemical Sciences) ; Barwe, Stephan (Ruhr-Universität Bochum. Center for Electrochemical Sciences) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Roldan Cuenya, Beatriz (Fritz-Haber Institute of the Max Planck Society) ; Muhler, Martin (Ruhr-Universität Bochum. Department of Physics) ; Schuhmann, Wolfgang (Ruhr-Universität Bochum. Center for Electrochemical Sciences)
The modification of nickel with boron or phosphorus leads to significant enhancement of its electrocatalytic activity for the oxygen evolution reaction (OER). However, the precise role of the guest elements, B and P, in enhancing the OER of the host element (Ni) remains unclear. [...]
2019 - 10.1002/celc.201800669
ChemElectroChem, Vol. 6, Issue 1 (January 2019) , p. 235-240  
9.
8 p, 4.8 MB III-V Integration on Si(100) : Vertical Nanospades / Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Garcia, Oscar (Universitat Politècnica de Catalunya) ; Boscardin, Mégane (École Polytechnique Fédérale de Lausanne) ; Vindice, David (École Polytechnique Fédérale de Lausanne) ; Tappy, Nicolas (École Polytechnique Fédérale de Lausanne) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ; Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ; Balgarkashi, Akshay (École Polytechnique Fédérale de Lausanne) ; Leran, Jean-Baptiste (École Polytechnique Fédérale de Lausanne) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
III-V integration on Si(100) is a challenge: controlled vertical vapor liquid solid nanowire growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs vertical nanostructure on Si(100), coined nanospade, obtained by a nonconventional droplet catalyst pinning. [...]
2019 - 10.1021/acsnano.9b01546
ACS nano, Vol. 13, Issue 5 (May 2019) , p. 5833-5840  
10.
36 p, 1.5 MB Growth of Au-Pd2Sn Nanorods via Galvanic Replacement and Their Catalytic Performance on Hydrogenation and Sonogashira Coupling Reactions / Nafria, Raquel (Institut de Recerca en Energia de Catalunya) ; Luo, Zhishan (Institut de Recerca en Energia de Catalunya) ; Ibáñez, Maria (EMPA-Swiss Federal Laboratories for Materials Science and Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Yu, Xiaoting (Institut de Recerca en Energia de Catalunya) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Llorca, Jordi (Universitat Politècnica de Catalunya. Departament d'Enginyeria Química) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Kovalenko, Maksym V. (ETH Zürich. Department of Chemistry and Applied Biosciences) ; Grabulosa, Arnald (Universitat de Barcelona. Departament de Química Inorgànica i Orgànica) ; Muller, Guillermo (Universitat de Barcelona. Departament de Química Inorgànica i Orgànica) ; Cabot, Andreu (Institut de Recerca en Energia de Catalunya)
Colloidal PdSn and Au-PdSn nanorods (NRs) with tuned size were produced by the reduction of Pd and Sn salts in the presence of size- and shape-controlling agents and the posterior growth of Au tips through a galvanic replacement reaction. [...]
2018 - 10.1021/acs.langmuir.8b02023
Langmuir, Vol. 34, Issue 36 (September 2018) , p. 10634-10643  

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