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93 p, 11.3 MB Towards Oxide Electronics : a Roadmap / Coll, Mariona (Institut de Ciència de Materials de Barcelona) ; Fontcuberta, Josep (Institut de Ciència de Materials de Barcelona) ; Althammer, Matthias (Technische Universität München. Physik Department) ; Bibes, Manuel (Unité Mixte de Physique) ; Boschker, Hans (Max Planck Institute for Solid State Research) ; Calleja, Ana (OXOLUTIA S.L.) ; Cheng, Guanglei (Pittsburgh Quantum Institute) ; Cuoco, Mario (Università di Salerno) ; Dittmann, Regina (Peter Grünberg Institut) ; Dkhil, Brahim (Université Paris-Saclay) ; El Baggari, Ismail (Cornell University) ; Fanciulli, Marco (University of Milano Bicocca. Department of Materials Science) ; Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Fortunato, Elvira (CEMOP/UNINOVA) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Fujita, Shizuo (Kyoto University) ; Garcia, Vincent (Unité Mixte de Physique) ; Goennenwein, Sebastian T. B. (Technische Universität Dresden) ; Granqvist, Claes Göran (Upp sala University) ; Grollier, Julie (Unité Mixte de Physique) ; Gross, Rudolf (Nanosystems Initiative Munich (NIM)) ; Hagfeldt, Anders (Ecole Polytechnique Fédérale de Lausanne) ; Herranz Casabona, Gervasi (Institut de Ciència de Materials de Barcelona) ; Hono, Kazuhiro (National Institute for Materials Science) ; Houwman, Evert (University of Twente) ; Huijben, Mark (University of Twente) ; Kalaboukhov, Aleksey (MC2. Chalmers University of Technology) ; Keeble, David J. (University of Dundee) ; Koster, Gertjan (University of Twente) ; Kourkoutis, Lena Fitting (Cornell University) ; Levy, Jeremy (Pittsburgh Quantum Institute) ; Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia) ; MacManus-Driscoll, Judith L. (University of Cambridge. Department of Materials Science and Metallurgy) ; Mannhart, Jochen (Max Planck Institute for Solid State Research) ; Martins, Rodrigo (MDM Laboratory) ; Menzel, Stephan (Pittsburgh Quantum Institute) ; Mikolajick, Thomas (Chair of Nanoelectronic Materials) ; Napari, Mari (University of Cambridge. Department of Materials Science and Metallurgy) ; Nguyen, Duc Minh (University of Twente) ; Niklasson, Gunnar A. (Uppsala University) ; Paillard, Charles (University of Arkansas. Physics Department) ; Panigrahi, Shrabani (CEMOP/UNINOVA) ; Rijnders, Guus (University of Twente) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Sanchis Kilders, Pablo (Universitat Politècnica de València) ; Sanna, S. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Schlom, Darrell G (Cornell University. Department of Material Science and Engineering) ; Schroeder, U. (NaMLab gGmbH) ; Shen, K. M. (Cornell University. Department of Physics) ; Siemon, A. (Institut für Werkstoffe der Elektrotechnik) ; Spreitzer, M. (Jožef Stefan Institute) ; Sukegawa, H. (Research Center for Magnetic and Spintronic Materials) ; Tamayo, R. (OXOLUTIA S.L.) ; van den Brink, J. (Institute for Theoretical Solid State Physics) ; Pryds, N. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Granozio, F. M. (CNR-SPIN. Naples Unit)
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. [...]
2019 - 10.1016/j.apsusc.2019.03.312
Applied surface science, Vol. 482 (July 2019) , p. 1-93  

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1 Menzel, Stephan
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