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93 p, 11.3 MB Towards Oxide Electronics : a Roadmap / Coll Bau, Mariona (Institut de Ciència de Materials de Barcelona) ; Fontcuberta i Griñó, Josep (Institut de Ciència de Materials de Barcelona) ; Althammer, M. (Technische Universität München. Physik-Department) ; Bibes, Manuel (Unité Mixte de Physique) ; Boschker, H. (Max Planck Institute for Solid State Research) ; Calleja, Albert (OXOLUTIA S.L.) ; Cheng, G. (Pittsburgh Quantum Institute) ; Cuoco, M. (Università di Salerno) ; Dittmann, R. (Peter Grünberg Institut) ; Dkhil, B. (Université Paris-Saclay) ; El Baggari, I. (Cornell University) ; Fanciulli, M. (University of Milano Bicocca. Department of Materials Science) ; Fina Martínez, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Fortunato, E. (CEMOP/UNINOVA) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Fujita, S. (Kyoto University) ; Garcia, V. (Unité Mixte de Physique) ; Goennenwein, S.T.B. (Technische Universität Dresden) ; Granqvist, C.G. (Upp sala University) ; Grollier, J. (Unité Mixte de Physique) ; Gross, R. (Nanosystems Initiative Munich (NIM)) ; Hagfeldt, Anders (Ecole Polytechnique Fédérale de Lausanne) ; Herranz Casabona, Gervasi (Institut de Ciència de Materials de Barcelona) ; Hono, K. (National Institute for Materials Science) ; Houwman, E. (University of Twente) ; Huijben, M. (University of Twente) ; Kalaboukhov, A. (MC2. Chalmers University of Technology) ; Keeble, D.J. (University of Dundee) ; Koster, G. (University of Twente) ; Kourkoutis, L.F. (Cornell University) ; Levy, J. (Pittsburgh Quantum Institute) ; Lira Cantú, Mónica (Institut Català de Nanociència i Nanotecnologia) ; MacManus-Driscoll, J.L. (University of Cambridge. Department of Materials Science and Metallurgy) ; Mannhart, J. (Max Planck Institute for Solid State Research) ; Martins, R. (MDM Laboratory) ; Menzel, S. (Pittsburgh Quantum Institute) ; Mikolajick, T. (Chair of Nanoelectronic Materials) ; Napari, M. (University of Cambridge. Department of Materials Science and Metallurgy) ; Nguyen, M.D. (University of Twente) ; Niklasson, G. (Upp sala University) ; Paillard, C. (University of Arkansas. Physics Department) ; Panigrahi, S. (CEMOP/UNINOVA) ; Rijnders, G. (University of Twente) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Sanchis, P. (Universitat Politècnica de València) ; Sanna, S. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Schlom, D.G. (Cornell University. Department of Material Science and Engineering) ; Schroeder, U. (NaMLab gGmbH) ; Shen, K.M. (Cornell University. Department of Physics) ; Siemon, A. (Institut für Werkstoffe der Elektrotechnik) ; Spreitzer, M. (Jožef Stefan Institute) ; Sukegawa, H. (Research Center for Magnetic and Spintronic Materials) ; Tamayo, R. (OXOLUTIA S.L.) ; van den Brink, J. (Institute for Theoretical Solid State Physics) ; Pryds, N. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Granozio, F.M. (CNR-SPIN. Naples Unit)
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. [...]
2019 - 10.1016/j.apsusc.2019.03.312
Applied surface science, Vol. 482 (July 2019) , p. 1-93  

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