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6 p, 1.5 MB |
Resonant tunnelling features in a suspended silicon nanowire single-hole transistor
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Llobet Sixto, Jordi (Institut de Microelectrònica de Barcelona) ;
Krali, Emiljana (Imperial College London. Department of Electrical and Electronic Engineering) ;
Wang, Chen (Imperial College London. Department of Electrical and Electronic Engineering) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Jones, Mervyn E. (Imperial College London. Department of Electrical and Electronic Engineering) ;
Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona) ;
Durrani, Zahid A. K. (Imperial College London. Department of Electrical and Electronic Engineering) ;
ALBA Laboratori de Llum de Sincrotró
Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. [...]
2015 -  10.1063/1.4936757
Applied physics letters, Vol. 107, issue 22 (Nov. 2015) , art. 223501
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10 p, 2.5 MB |
A statistical analysis of nanocavities replication applied to injection moulding
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Pina-Estany, J. (Institut Químic de Sarrià) ;
Colominas, C. (Institut Químic de Sarrià) ;
Fraxedas i Calduch, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Llobet, J. (Institut de Microelectrònica de Barcelona) ;
Pérez-Murano, Francesc (Institut de Microelectrònica de Barcelona) ;
Puigoriol-Forcada, Josep Maria (Institut Químic de Sarrià) ;
Ruso, D. (Flubetech SL) ;
Garcia-Granada, A.A. (Institut Químic de Sarrià)
The purpose of this paper is to investigate both theoretically and experimentally how nanocavities are replicated in the injection moulding manufacturing process. The objective is to obtain a methodology for efficiently replicate nanocavities. [...]
2017 - 10.1016/j.icheatmasstransfer.2016.11.003
International communications in heat and mass transfer, Vol. 81 (Feb. 2017) , p. 131-140
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3.
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10 p, 6.7 MB |
Identifying the nature of surface chemical modification for directed self-assembly of block copolymers
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Evangelio Araujo, Laura (Institut Català de Nanociència i Nanotecnologia) ;
Gramazio, Federico (Institut Català de Nanociència i Nanotecnologia) ;
Lorenzoni, Matteo (Institut de Microelectrònica de Barcelona) ;
Gorgoi, Michaela (Helmholtz-Zentrum Berlin. Energy Materials In-situ Laboratory) ;
Espinosa, Francisco Miguel (Instituto de Ciencia de Materiales de Madrid) ;
García, Ricardo (Instituto de Ciencia de Materiales de Madrid) ;
Pérez-Murano, Francesc (Institut de Microelectrònica de Barcelona) ;
Fraxedas i Calduch, Jordi (Institut Català de Nanociència i Nanotecnologia)
In recent years, block copolymer lithography has emerged as a viable alternative technology for advanced lithography. In chemical-epitaxy-directed self-assembly, the interfacial energy between the substrate and each block copolymer domain plays a key role on the final ordering. [...]
2017 - 10.3762/bjnano.8.198
Beilstein journal of nanotechnology, Vol. 8 (Sep. 2017) , p. 1972-1981
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4.
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9 p, 1.3 MB |
Functional dependence of resonant harmonics on nanomechanical parameters in dynamic mode atomic force microscopy
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Gramazio, Federico (Institut Català de Nanociència i Nanotecnologia) ;
Lorenzoni, Matteo (Institut de Microelectrònica de Barcelona) ;
Pérez-Murano, Francesc (Institut de Microelectrònica de Barcelona) ;
Rull Trinidad, Enrique (Technische Universiteit Delft) ;
Staufer, Urs (Technische Universiteit Delft) ;
Fraxedas i Calduch, Jordi (Institut Català de Nanociència i Nanotecnologia)
We present a combined theoretical and experimental study of the dependence of resonant higher harmonics of rectangular cantilevers of an atomic force microscope (AFM) as a function of relevant parameters such as the cantilever force constant, tip radius and free oscillation amplitude as well as the stiffness of the sample's surface. [...]
2017 - 10.3762/bjnano.8.90
Beilstein Journal of Nanotechnology, Vol. 8 (April 2017) , p. 883-891
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4 p, 355.8 KB |
Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry
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Forsen, E. (Technical University of Denmark. Department of Micro and Nanotechnology) ;
Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Ghatnekar-Nilsson, S. (University of Lund. Solid State Physics and The Nanometer Consortium) ;
Teva Meroño, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Verd Martorell, Jaume (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Sandberg, R. (Technical University of Denmark. Department of Micro and Nanotechnology) ;
Svendsen, W. (Technical University of Denmark. Department of Micro and Nanotechnology) ;
Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Esteve Tinto, Jaume (Institut de Microelectrònica de Barcelona (IMB-CNM)) ;
Figueras Costa, Eduardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Campabadal Segura, Francesca (Institut de Microelectrònica de Barcelona (IMB-CNM)) ;
Montelius, L. (University of Lund. Solid State Physics and The Nanometer Consortium) ;
Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Boisen, A. (Technical University of Denmark. Department of Micro and Nanotechnology) ;
American Physical Society
Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor(CMOS) chips. Fabricatedresonatorsystems have been designed to have resonance frequencies up to 1. [...]
2005 - 10.1063/1.1999838
Applied Physics Letters, Vol. 87, Issue 4 (July 2005) , p. 043507/1- 043507/3
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8.
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4 p, 414.9 KB |
Local oxidation of silicon surfaces by dynamic force microscopy : nanofabrication and water bridge formation
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García, Ricardo (Instituto de Microelectronica de Madrid) ;
Calleja, M. (Instituto de Microelectronica de Madrid) ;
Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
American Physical Society
Local oxidation of siliconsurfaces by atomic force microscopy is a very promising lithographic approach at nanometer scale. Here, we study the reproducibility, voltage dependence, and kinetics when the oxidation is performed by dynamic force microscopy modes. [...]
1998 - 10.1063/1.121340
Applied Physics Letters, Vol. 72, Issue 18 (May 1998) , p. 2295-2297
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4 p, 392.4 KB |
Predictive model for scanned probe oxidation kinetics
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Dagata, J. A. (National Institute of Standards and Technology (Gaithersburg, Estats Units d'Amèrica)) ;
Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Morimoto, K. (Matsushita Electrical Industrial (Osaka, Japó)) ;
Inoue, T. (Electrotechnical Laboratory (Tsukuba, Japó)) ;
Itoh, J. (Electrotechnical Laboratory (Tsukuba, Japó)) ;
Yokoyama, H. (Electrotechnical Laboratory (Tsukuba, Japó)) ;
American Physical Society
Previous descriptions of scanned probe oxidation kinetics involved implicit assumptions that one-dimensional, steady-state models apply for arbitrary values of applied voltage and pulse duration. These assumptions have led to inconsistent interpretations regarding the fundamental processes that contribute to control of oxide growth rate. [...]
2000 - 10.1063/1.126451
Applied Physics Letters, Vol. 76, Issue 19 (March 2000) , p. 2710-2712
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