Resultats globals: 15 registres trobats en 0.02 segons.
Articles, 14 registres trobats
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Articles 14 registres trobats  1 - 10següent  anar al registre:
1.
19 p, 1.0 MB P-type β-gallium oxide : a new perspective for power and optoelectronic devices / Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Ton-That, C. (University of Technology Sydney) ; Huynh, Tung Thanh (University of Technology Sydney) ; Phillips, Matthew (University of Technology Sydney) ; Russell, Stephen A.O. (University of Warwick) ; Jennings, M.R. (University of Warwick) ; Berini, Bruno (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jomard, François (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS)
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . [...]
2017 - 10.1016/j.mtphys.2017.10.002
Materials today physics, Vol. 3 (December 2017) , p. 118-126  
2.
7 p, 2.6 MB A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability / Li, Fan (University of Warwick) ; Mawby, Philip A. (University of Warwick) ; Song, Qiu (University of Warwick) ; Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick) ; Sharma, Yogesh (Dynex Semiconductor Ltd.) ; Hamilton, Dean P. (De Montfort University) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Jennings, M.R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242  
3.
15 p, 1.1 MB Wide and ultra-wide bandgap oxides : where paradigm-shift photovoltaics meets transparent power electronics / Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M.R. (University of Warwick) ; Russell, Stephen A.O. (University of Warwick) ; Teherani, Féréchteh Hosseini (Nanovation) ; Bove, Philippe (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Rogers, David J. (Nanovation)
Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. [...]
2018 - 10.1117/12.2302576
Proceedings of SPIE - The International Society for Optical Engineering, Vol. 10533 (February 2018) , art. 105331Q  
4.
36 p, 830.9 KB Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes / Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M.R. (Swansea University) ; Russell, Stephen A. O. (University of Warwick) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Lira Cantú, Mónica (Institut Català de Nanociència i Nanotecnologia) ; Ton-That, C. (University of Technology Sydney) ; Teherani, Féréchteh Hosseini (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Bove, Philippe (Nanovation) ; Rogers, David J. (Nanovation)
The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-GaO) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley-Queisser limit for open-circuit voltage (V) under typical indoor light. [...]
2019 - 10.1016/j.mtener.2019.100350
Materials today energy, Vol. 14 (December 2019) , art. 100350  
5.
117 p, 3.9 MB Functional Oxides for Photoneuromorphic Engineering : Toward a Solar Brain / Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia)
New device concepts and new computing principles are needed to balance our ever-growing appetite for data and information with the realization of the goals of increased energy efficiency, reduction in CO emissions, and the circular economy. [...]
2019 - 10.1002/admi.201900471
Advanced materials interfaces, Vol. 6, Issue 15 (August 2019) , art. 1900471  
6.
22 p, 880.5 KB Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films / Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Rogers, David J. (Nanovation) ; Teherani, Féréchteh Hosseini (Nanovation) ; Rubio Lorente, Carles (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Von Bardeleben, Hans Jürgen (Institut des Nanosciences de Paris) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Ton-That, C. (University of Technology Sydney) ; Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Bove, Philippe (Nanovation) ; Sandana, Éric V. (Nanovation) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia)
Here, we report the analogy of an extremely stable topological-like ultra-wide bandgap insulator, a solid that is a pure insulator in its bulk but has a metallic conductive surface, presenting a two-dimensional conductive channel at its surface that challenges our current thinking about semiconductor conductivity engineering. [...]
2019 - 10.1016/j.mtphys.2018.11.006
Materials today physics, Vol. 8 (March 2019) , p. 10-17  
7.
15 p, 1.3 MB High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs / Hamilton, Dean P. (University of Warwick) ; Jennings, M.R. (University of Warwick) ; Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Russell, Stephen A.O. (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Fisher, C.A. (University of Warwick) ; Mawby, Philip A. (University of Warwick)
The temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. [...]
2017 - 10.1109/TPEL.2016.2636743
IEEE transactions on power electronics, Vol. 32, Issue 10 (October 2017) , p. 7967-7979  
8.
22 p, 452.7 KB A solar transistor and photoferroelectric memory / Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Lima, F. Anderson S. (Institut Català de Nanociència i Nanotecnologia) ; Billon, Quentin (Institut Català de Nanociència i Nanotecnologia) ; Shirley, Ian (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Lira Cantú, Mónica (Institut Català de Nanociència i Nanotecnologia)
This study presents a new self-powered electronic transistor concept "the solar transistor. " The transistor effect is enabled by the functional integration of a ferroelectric-oxide thin film and an organic bulk heterojunction. [...]
2018 - 10.1002/adfm.201707099
Advanced functional materials, Vol. 28, issue 17 (April, 2018) , art. 1707099  
9.
21 p, 746.1 KB Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor / Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Fontserè Recuenco, Abel (ALBA Laboratori de Llum de Sincrotró) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Chen, H. (University of Warwick. School of Engineering) ; Gammon, P.M. (University of Warwick. School of Engineering) ; Jennings, M.R. (University of Warwick. School of Engineering) ; Thomas, M. (University of Warwick. School of Engineering) ; Fisher, C.A. (University of Warwick. School of Engineering) ; Sharma, Y.K. (University of Warwick. School of Engineering) ; Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ; Chmielowska, M. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Chenot, S. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Cordier, Y. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications)
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. [...]
2015 - 10.1088/0957-4484/26/11/115203
Nanotechnology, Vol. 26, Issue 11 (March 2015) , art. 115203  
10.
27 p, 1.3 MB Performance and stability of mixed FAPbI3(0.85)MAPbBr3(0.15) halide perovskite solar cells under outdoor conditions and the effect of low light irradiation / Reyna, Yegraf (Institut Català de Nanociència i Nanotecnologia) ; Salado, Manuel (Abengoa Research) ; Kazim, Samrana (Abengoa Research) ; Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Ahmad, Shahzada (Abengoa Research) ; Lira Cantú, Mónica (Institut Català de Nanociència i Nanotecnologia)
We demonstrate for the first time, the real lifetime response of mixed halide perovskite solar cells (PSCs) for >1000 h under outdoor conditions and the exceptional photoresponse observed at low-light intensities attributed to the ionic-electronic nature of the material. [...]
2016 - 10.1016/j.nanoen.2016.10.053
Nano Energy, Vol. 30 (December 2016) , p. 570-579  

Articles : 14 registres trobats   1 - 10següent  anar al registre:
Documents de recerca 1 registres trobats  
1.
205 p, 7.9 MB Novel materials and processes for gate dielectrics on silicon carbide / Pérez Tomàs, Amador ; Godignon, Philippe, dir. (Institut de Microelectrònica de Barcelona)
There is considerable evidence of the need for a semiconductor technology which exceeds the limitations imposed by silicon across a wide spectrum of industrial applications. Wide bandgap semiconductor, such as silicon carbide (SiC), gallium nitride (GaN) and diamond, offer the potential to overcome both the temperature and voltage blocking limitations of Si. [...]
Bellaterra : Universitat Autònoma de Barcelona, 2007  

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