Home > Search Results: Palumbo, Félix
  Search Tips
Advanced Search
Search collections:
Sort by: Display results: Output format:
Results overview: Found 5 records in 0.02 seconds.
Articles, 5 records found
Articles 5 records found  
1.
20 p, 4.7 MB Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition / Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pazos, Sebastián Matías (Consejo Nacional de Investigaciones Científicas y Técnicas) ; Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We investigate the use and performance of the quasi-static memdiode model (QMM) when incorporated into large cross-point arrays intended for pattern classification tasks. Following Chua's memristive devices theory, the QMM comprises two equations, one equation for the electron transport based on the double-diode circuit with single series resistance and a second equation for the internal memory state of the device based on the so-called logistic hysteron or memory map. [...]
2020 - 10.1109/ACCESS.2020.3035638
IEEE Access, Vol. 8 (November 2020) , p. 202174-202193  
Detailed record - Creative Commons
2.
46 p, 10.4 MB On the Thermal Models for Resistive Random Access Memory Circuit Simulation / Roldán, Juan B. (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; González-Cordero, Gerardo (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Picos, Rodrigo (University of Balearic Islands. Industrial Engineering and Construction Department) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ; Jiménez-Molinos, Francisco (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Moreno Pérez, Enrique (Université Jean Monnet) ; Maldonado, David (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Baldomá, Santiago B. (Universidad Tecnológica Nacional. Unidad de Investigación y Desarrollo de las Ingenierías) ; Moner Al Chawa, Mohamad (Technische Universität Dresden. Institute of Circuits and Systems) ; de Benito, Carol (University of Balearic Islands. Industrial Engineering and Construction Department) ; Stavrinides, Stavros G. (International Hellenic University) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Chua, Leon O. (University of California. Electrical Engineering and Computer Science Department)
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware cryptography. [...]
2021 - 10.3390/nano11051261
Nanomaterials, Vol. 11, Issue 5 (May 2021) , art. 1261  
Detailed record - Creative Commons
3.
24 p, 21.3 MB Assessment and improvement of the pattern recognition performance of memdiode-based cross-point arrays with randomly distributed stuck-at-faults / Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pazos, Sebastián M. (Consejo Nacional de Investigaciones Científicas y Técnicas) ; Palumbo, Félix (Consejo Nacional de Investigaciones Científicas y Técnicas) ; Morell Pérez, Antoni (Universitat Autònoma de Barcelona. Departament de Telecomunicació i Enginyeria de Sistemes) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the effect of randomly distributed stuck-at faults (SAFs) in memristive crosspoint array (CPA)-based single and multi-layer perceptrons (SLPs and MLPs, respectively) intended for pattern recognition tasks is investigated by means of realistic SPICE simulations. [...]
2021 - 10.3390/electronics10192427
Electronics, Vol. 10, Issue 19 (October 2021) , art. 2427  
Detailed record - Creative Commons
4.
18 p, 2.9 MB Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition / Aguirre, Fernando Leonel (Universidad Tecnológica Nacional) ; Gomez, Nicolás M. (Universidad Tecnológica Nacional) ; Pazos, Sebastián Matías (Universidad Tecnológica Nacional) ; Palumbo, Félix (Universidad Tecnológica Nacional) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this paper, we extend the application of the Quasi-Static Memdiode model to the realistic SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) intended for large dataset pattern recognition. [...]
2021 - 10.3390/jlpea11010009
Journal of low power electronics and applications, Vol. 11, Issue 1 (March 2021) , art. 9  
Detailed record - Creative Commons
5.
8 p, 3.6 MB Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides / Aguirre, Fernando Leonel (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pazos, Sebastián Matías (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Palumbo, Félix (Universidad Tecnológica Nacional (Buenos Aires, Argentina))
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0. [...]
2019 - 10.1109/TED.2019.2922555
IEEE transactions on electron devices, Vol. 66, Issue 8 (August 2019) , p. 3349-3355  
Detailed record -

See also: similar author names
1 Palumbo, F.
5 Palumbo, Felix
1 Palumbo, Filippo
Interested in being notified about new results for this query?
Set up a personal email alert or subscribe to the RSS feed.
UAB Digital Repository of Documents :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.6
Maintained by ddd.bib@uab.cat  :: Metadata license:
Working with